Typical output characteristic, Switching speed, Threshold voltage vs temperature – Diodes ZXMS6001N3 User Manual
Page 8: On-resistance vs input voltage, Source-drain diode forward voltage, On-state resistance vs temperature
ZXMS6001N3
© Zetex Semiconductors plc 2008
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
0
1
2
3
-20µ
0
20µ 40µ 60µ 80µ 100µ120µ 140µ160µ
0
2
4
6
8
10
12
-50
-25
0
25
50
75
100
125
150
0.4
0.6
0.8
1.0
1.2
1.4
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
-50
-25
0
25
50
75
100
125
150
0
200
400
600
800
1000
6V
5V
3V
4V
Typical Output Characteristic
T = 25°C
V
IN
I
D
D
rain Cu
rr
ent
(A
)
V
DS
Drain-Source Voltage (V)
Current limit inactive
Current limit active
R
D
= 22
Ω
R
IN
= 25
Ω
V
DS
V
IN
Switching Speed
Volt
ag
e (
V
)
Time (s)
Threshold Voltage vs Temperature
V
IN
= V
DS
I
D
= 1mA
N
o
rm
a
lis
ed
V
IN
(t
h
)
T
J
Junction Temperature (°C)
On-Resistance vs Input Voltage
T
J
= 25°C
I
D
= 0.7A
R
DS
(o
n)
On
-Res
ist
an
c
e (
Ω
)
V
IN
Input Voltage (V)
T
J
= 150°C
T
J
= 25°C
Source-Drain Diode Forward Voltage
V
SD
Diode Forward Voltage (V)
I
S
S
o
u
rc
e
Cur
rent
(
A
)
V
IN
= 5V
I
D
= 0.7A
On-state Resistance vs Temperature
R
DS
(o
n
)
O
n-
R
es
is
tance
(m
Ω
)
T
J
Junction Temperature (°C)