Diodes ZXMS6001N3 - Manual

Issue 1 - January 2008 1 www.zetex.com
© Zetex Semiconductors plc 2008
ZXMS6001N3
60V N-channel self protected enhancement mode
INTELLIFET
TM MOSFET
Summary
Continuous drain source voltage V
DS
= 60V
On-state resistance 675m
Ω
Max nominal load current (a) 1.1A (V
IN
= 5V)
Min nominal load current (c) 0.7A (V
IN
= 5V)
Clamping Energy 550mJ
Description
Low input current self protected low side MOSFET intended for Vin=5V
applications. Monolithic over temperature, over current, over voltage
(active clamp) and ESD protected logic level functionality. Intended as
a general purpose switch.
Note:
The tab is connected to the source pin and must be electrically isolated
from the drain pin. Connection of significant copper to the drain pin is
recommended for best thermal performance.
Features
• Short circuit protection with auto restart
• Over voltage protection (active clamp)
• Thermal shutdown with auto restart
• Over-current protection
• Input protection (ESD)
• Load dump protection (actively protects load)
• Low input current
Ordering information
Device Package Part mark Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMS6001N3TA SOT223 ZXMS6001 7 12 embossed 1,000
S
SOT223
S
D
IN