Diodes ZXMS6001N3 - Manual (Page 7)

ZXMS6001N3
Issue 1 - January 2008 7 www.zetex.com
© Zetex Semiconductors plc 2008
Large copper area characteristics
For large copper area as described in note (a)
Max Ambient Temperature T
A
Maximum continuous current
V
IN
=5V
25°C at Vin=5V 1140
70°C at Vin=5V 915
85°C at Vin=5V 825
125°C at Vin=5V 510
1 10 100
10m
100m
1
1ms
Single Pulse
T
amb
=25°C
R
DS(on)
Limited
10ms
100ms
1s
Safe Operating Area
I D
D
rain Cur
ren
t (
A
)
V
DS
Drain-Source Voltage (V)
DC
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
See Note (a) 6cm 2 Copper
Derating Curve
Temperature (°C) M
a
x P
o
wer
D
issip
a
ti
on
(
W
)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Ther
mal Res
istan
c
e
(
°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
M
a
x
imu
m
P
o
w
e
r (
W
)