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Teccor, Brand thyristors, 40 amp alternistor (high commutation) triacs – Littelfuse Qxx40xx Series User Manual

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162

Revised: 09/23/13

©2013 Littelfuse, Inc

Specifications are subject to change without notice.

Teccor

®

brand Thyristors

40 Amp Alternistor (High Commutation) Triacs

Qxx40xx Series

Electrical Characteristics

(T

J

= 25°C, unless otherwise specified)

— Alternistor Triac

(3 Quadrants)

Symbol

Test Conditions

Quadrant

Value

Unit

Qxx40xH6

Qxx40K5

Qxx40x7

I

GT

V

D

= 12V R

L

= 60

:

*o**o***

MAX.

80

50

100

mA

V

GT

*o**o***

MAX.

1.3

1.3

2.0

V

V

GD

V

D

= V

DRM

R

L

= 3.3 k

: T

J

= 125°C

*o**o***

MIN.

0.2

V

I

H

I

T

= 400mA

MAX.

80

75

100

mA

dv/dt

V

D

= V

DRM

Gate Open T

J

= 125°C

400V

MIN.

600

500

700

V/μs

600V

500

475

625

800V

475

400

575

V

D

= V

DRM

Gate Open T

J

= 100°C

1000V

- -

500

(dv/dt)c

(di/dt)c = 21.6 A/ms T

J

= 125°C

MIN.

30

20

50

V/μs

t

gt

I

G

= 2 x I

GT

PW = 15μs I

T

= 56.6A(pk)

TYP.

5

μs

Static Characteristics

Symbol

Test Conditions

Value

Unit

V

TM

I

TM

= 56.6A t

p

= 380 μs

T

J

= 25°C

MAX.

1.8

V

I

DRM

I

RRM

V

D

= V

DRM

/ V

RRM

T

J

= 25°C

o7

MAX.

20

μA

T

J

= 125°C

o7

MAX.

5

mA

T

J

= 100°C

1000V

MAX.

5

mA

Thermal Resistances

Symbol

Parameter

Value

Unit

R

T(J-C)

Junction to case (AC)

Qxx40KH6

Qxx40K5
Qxx40K7

0.97

°C/W

Qxx40JH6

Qxx40J7

0.95

Note: xx = voltage

Absolute Maximum Ratings — Alternistor Triac

(3 Quadrants)

Symbol

Parameter

Value

Unit

I

T(RMS)

RMS on-state current (full sine wave)

Qxx40x7

Qxx40xH6

T

C

= 75°C

40

A

I

TSM

Non repetitive surge peak on-state current

(full cycle, T

J

initial = 25°C)

f = 50 Hz

t = 20 ms

335

A

f = 60 Hz

t = 16.7 ms

400

I

2

t

I

2

t Value for fusing

t

p

= 8.3 ms

664

A

2

s

di/dt

Critical rate of rise of on-state current

(I

G

= 2 x I

GT

, tr ≤ 100 ns)

f = 120 Hz

T

J

= 125°C

150

A/μs

I

GTM

Peak gate trigger current

t

p

d 10 μs I

GT

d I

GTM

T

J

= 125°C

4

A

P

G(AV)

Average gate power dissipation

T

J

= 125°C

0.8

W

T

stg

Storage temperature range

-40 to 150

°C

T

J

Operating junction temperature range

-40 to 125

°C

Note: xx = voltage, x = package