Littelfuse SP3010 Series - Manual (Page 2)

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 04/24/13
TVS Diode Arrays
(SPA ® Diodes)
Low Capacitance ESD Protection - SP3010 Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of
the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
Peak Current (t
p
=8/20μs) 3.0 A
T
OP
Operating Temperature –40 to 125 °C
T
STOR
Storage Temperature –55 to 150 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
≤ 1µA 6.0 V
Reverse Leakage Current I
LEAK
V
R
=5V, Any I/O to GND 0.1 0.5 µA
Clamp Voltage 1 V
C
I
PP
=1A, t
p
=8/20µs, Fwd 10.8 V
I
PP
=2A, t
p
=8/20µs, Fwd 12.3 V
Dynamic Resistance R
DYN
(V
C2
- V
C1
) / (I
PP2
- I
PP1
) 1.5 Ω
ESD Withstand Voltage 1 V
ESD
IEC61000-4-2 (Contact) ±8 kV
IEC61000-4-2 (Air) ±15 kV
Diode Capacitance 1 C
I/O-GND
Reverse Bias=0V 0.45 pF
Note: 1 Parameter is guaranteed by design and/or device characterization.
Insertion Loss (S21) I/O to GND Capacitance vs. Bias Voltage
Clamping Voltage vs. I
PP
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
I/O Bias Voltage (V)
I/O
Ca
p
aci
ta
n
ce
(pF)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
1.5 1.0 2.0 2.5 3.0
Peak Pulse Current-I
PP
(A)
Cl
am
p Volt
ag
e
(V
C
)
-30
-25
-20
-15
-10
-5
0
10 100 1000 10000
Frequency (MHz)
At
te
nuat
ion
(d
B)
Pulse Waveform
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Pe
rcen
t
of
I PP