Teccor, Brand thyristors, High energy unidirectional sidacs – Littelfuse K2xx0yHU Series User Manual
Page 2: Figure 1: v-i characteristics, Figure 4: repetitive peak on-state current (i, Vs. pulse width at various frequencies, Change vs. junction temperature
![background image](/manuals/292335/2/background.png)
2
Revised: 01/06/14
Specifications are subject to change without notice.
©2014 Littelfuse, Inc
Teccor
®
brand Thyristors
High Energy Unidirectional SIDACs
K2xx0GHURP Series
Figure 1: V-I Characteristics
-V
+I
V
DRM
+V
V
S
I
S
I
H
R
S
I
DRM
I
BO
V
BO
V
T
I
T
(I
S
- I
BO
)
(V
BO
- V
S
)
R
S =
-I
0
1
2
3
4
5
6
7
8
9
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous On-stat
e Cur
rent (i
T
) –
Amps
Instantaneous On-state Voltage (v
T
) – Volts
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE:
See basic SIDAC circuit in Figure 12
Av
er
ag
e On-Stat
e P
ow
er Dissipation
[P
D(A
V)
] -
Wa
tt
s
RMS On-State Current [I
T(RMS)
] - Amps
Figure 3: Power Dissipation vs. On-state Current
(Typical)
Figure 2: On-state Current vs. On-state
Voltage (Typical)
1
10
100
1000
1
10
100
1000
Pulse Base Width (t
O
) - us
5 Hz
60 Hz
1 kHz
5 kHz
di/dt Limit Line
Repetitiv
e P
eak On-Stat
e Cur
rent (I
TRM
) -
Amps
I
TM
t
O
1/f
Figure 4: Repetitive Peak On-state Current (I
TRM
)
vs. Pulse Width at Various Frequencies
1
10
100
1
10
100
1000
Surge Current Duration -- Full Cycles
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: I
T
RMS Maximum Rated
Value at Specified Junction Temperature
Notes:
1) Blocking capability may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned
to steady-state rated value.
Peak Sur
ge
(Non-r
epetitiv
e)
On-stat
e Cur
rent (I
TSM
) –
Amps
Figure 5: Surge Peak On-state Current
vs. Number of Cycles
Figure 6: Normalized V
BO
Change
vs. Junction Temperature
-8%
-6%
-4%
-2%
0%
2%
4%
6%
8%
10%
-40
-20
0
20
40
60
80
100
120
140
Junction Temperature (T
J
) -- °C
V
BO
Chang
e -- %