Littelfuse Qxx10xHx Series - Manual (Page 2)

98
Revised: 09/23/13
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Teccor ® brand Thyristors
10 Amp Standard & Alternistor (High Communitation) Triacs
Qxx10xx & Qxx10xHx Series
Absolute Maximum Ratings — Standard Triac
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine wave)
Qxx10Ry/
Qxx10Ny
T
C
= 95°C
10 A
Qxx10Ly T
C
= 90°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
f = 50 Hz t = 20 ms 100
A
f = 60 Hz t = 16.7 ms 120
I 2 t I 2 t Value for fusing t
p
= 8.3 ms 60 A 2 s
di/dt
Critical rate of rise of on-state current
I
G
= 200mA with d 0.1μs rise time
f = 120 Hz T
J
= 125°C 70 A/μs
I
GTM
Peak gate trigger current
t
p
d 10 μs
I
GT
d I
GTM
T
J
= 125°C 1.8 A
P
G(AV)
Average gate power dissipation T
J
= 125°C 0.5 W
T
stg
Storage temperature range -40 to 150 °C
T
J
Operating junction temperature range -40 to 125 °C
Absolute Maximum Ratings — Alternistor Triac (3 Quadrants)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current (full sine wave)
Qxx10LHy T
C
= 90°C
10 A Qxx10RHy/
Qxx10NHy
T
C
= 95°C
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
f = 50 Hz t = 20 ms 110
A
f = 60 Hz t = 16.7 ms 120
I 2 t I 2 t Value for fusing t
p
= 8.3 ms 60 A 2 s
di/dt Critical rate of rise of on-state current f = 120 Hz T
J
= 125°C 70 A/μs
I
GTM
Peak gate trigger current
t
p
d 10 μs
I
GT
d I
GTM
T
J
= 125°C 2.0 A
P
G(AV)
Average gate power dissipation T
J
= 125°C 0.5 W
T
stg
Storage temperature range -40 to 150 °C
T
J
Operating junction temperature range -40 to 125 °C
Electrical Characteristics (T
J
= 25°C, unless otherwise specified) — Standard Triac
Symbol Test Conditions Quadrant Qxx10x4 Qxx10x5 Unit
I
GT
V
D
= 12V R
L
= 60 :
*o**o***
IV
MAX.
25
50 50
75 (TYP)
mA
V
GT
*o**o*** MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 k : T
J
= 125°C ALL MIN. 0.2 V
I
H
I
T
= 200mA MAX. 35 50 mA
dv/dt
V
D
= V
DRM
Gate Open T
J
= 125°C
400V
MIN.
150 225
V/μs
600V 100 200
800V 75 175
V
D
= V
DRM
Gate Open T
J
= 100°C 1000V 50 150
(dv/dt)c (di/dt)c = 5.4 A/ms T
J
= 125°C TYP. 2 4 V/μs
t
gt
I
G
= 2 x IGT PW = 15μs I
T
= 14.1 A(pk) TYP. 3.0 3.0 μs
Note: xx = voltage, x = package, y = sensitivity