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Teccor, Brand thyristors – Littelfuse QxxxxLTx Series User Manual

Page 2

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170

Revised: 09/23/13

©2013 Littelfuse, Inc

Specifications are subject to change without notice.

Teccor

®

brand Thyristors

4 / 6 / 8 / 10 / 15 Amp Quadracs

QxxxxLTx Series

Absolute Maximum Ratings

Symbol

Parameter

Value

Unit

Qxx04L

T

Qxx06L

T /

Qxx06L

TH

Qxx08L

T /

Qxx08L

TH

Qxx1

0L

T /

Qxx1

0L

TH

Qxx1

5L

T /

Qxx1

5L

TH

I

T(RMS)

RMS forward current

Qxx04LT: T

C

= 95°C

Qxx06LT/Qxx08LT/Qxx10LT: T

C

= 90°C

Qxx15LT: T

C

= 80°C

4

6

8

10

15

A

I

TSM

Peak non-repetitive surge current

single half cycle; f = 50Hz;

T

J

(initial) = 25°C

46

65

83

100

167

A

single half cycle; f = 60Hz;

T

J

(initial) = 25°C

55

80

100

120

200

I

2

t

I

2

t value for fusing

t

p

= 8.3ms

12.5

26.5

41

60

166

A

2

s

di/dt

Critical rate-of-rise of on-state current

f = 60Hz; T

J

=125°C

50

70

100

A/μs

I

GM

Peak gate current

T

J

= 125°C

1.5

A

T

stg

Storage temperature range

-40 to 150

°C

T

J

Operating junction temperature range

-40 to 125

°C

Note: xx = voltage

Electrical Characteristics

(T

J

= 25°C, unless otherwise specified)

– Standard Quadrac

Electrical Characteristics

(T

J

= 25°C, unless otherwise specified)

– Alternistor Quadrac

Symbol

Test Conditions

Value

Unit

Qxx04L

T

Qxx06L

T

Qxx08L

T

Qxx1

0L

T

Qxx1

5L

T

I

H

I

T

= 200mA (initial)

MAX.

40

50

60

60

70

mA

dv/dt

V

D

= V

DRM

; gate open; T

J

=100°C

MIN.

400V

75

150

175

200

300

V/μs

600V

50

125

150

175

200

V

D

= V

DRM

; gate open; T

J

=125°C

MIN.

400V

50

100

120

150

200

600V

50

85

100

120

150

dv/dt(c)

di/dt(c) = 0.54 x I

T(rms)

/ ms; T

J

= 125°C

MIN.

3

4

V/μs

t

gt

(note 1)

TYP.

3

μs

(1) Reference test circuit in figure 10 and waveform in figure 11; C

T

= 0.1μF with 0.1μs rise time.

Note: xx = voltage

Symbol

Test Conditions

Value

Unit

Qxx06L

TH

Qxx08L

TH

Qxx1

0L

TH

Qxx1

5L

TH

I

H

I

T

= 20mA (initial)

MAX.

50

50

60

70

mA

dv/dt

V

D

= V

DRM

; gate open; T

J

=100°C

MIN.

400V

575

925

V/μs

600V

425

775

V

D

= V

DRM

; gate open; T

J

=125°C

MIN.

400V

450

700

600V

350

600

dv/dt(c)

di/dt(c) = 0.54 x I

T(rms)

/ ms; T

J

= 125°C

MIN.

25

30

V/μs

t

gt

(note 1)

TYP.

3

μs

(1) Reference test circuit in figure 10 and waveform in figure 11; C

T

= 0.1μF with 0.1μs rise time.

Note: xx = voltage