Teccor, Brand thyristors, 8 amp sensitive & standard triacs – Littelfuse QxXx Series User Manual
Page 2
18
Revised: 09/23/13
©2013 Littelfuse, Inc
Specifications are subject to change without notice.
Teccor
®
brand Thyristors
0.8 Amp Sensitive & Standard Triacs
LxX8Ex & LxXx & QxX8Ex & QxXx Series
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Sensitive Triac
(4 Quadrants)
Symbol
Test Conditions
Quadrant
LxX8E3
LxX3
LxX8E5
LxX5
LxX8E6
LxX6
LxX8E8
LxX8
Unit
I
GT
V
D
= 12V R
L
= 30
:
*o**o***
MAX.
3
5
5
10
mA
IV
3
5
10
20
V
GT
ALL
MAX.
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
: T
J
= 110°C
ALL
MIN.
0.2
V
I
H
I
T
= 100mA
MAX.
5
10
10
15
mA
dv/dt
V
D
= V
DRM
Gate Open T
J
= 100°C
400V
TYP.
15
15
25
30
V/μs
600V
10
10
20
25
(dv/dt)c
(di/dt)c = 0.43 A/ms T
J
= 110°C
TYP.
0.5
1
1
2
V/μs
t
gt
I
G
= 2 x I
GT
PW = 15μs I
T
= 1.13 A(pk)
TYP.
2.8
3.0
3.0
3.2
μs
Absolute Maximum Ratings — Standard Triac
Symbol
Parameter
Value
Unit
I
T(RMS)
RMS on-state current
(full sine wave)
QxXE8y/
QxXy
T
C
= 60°C
0.8
A
I
TSM
Non repetitive surge peak on-state current
(full cycle, T
J
initial = 25°C)
f = 50 Hz
t = 20 ms
8.3
A
f = 60 Hz
t = 16.7 ms
10
I
2
t
I
2
t Value for fusing
t
p
= 8.3 ms
0.41
A
2
s
di/dt
Critical rate of rise of on-state current
(I
G
= 200mA with
d 0.1μs rise time)
f = 120 Hz
T
J
= 125°C
20
A/μs
I
GTM
Peak gate trigger current
t
p
= 10 μs;
I
GT
d I
GTM
T
J
= 125°C
1
A
P
G(AV)
Average gate power dissipation
T
J
= 125°C
0.2
W
T
stg
Storage junction temperature range
QxX8Ey
-65 to 150
°C
QxXy
-40 to 150
T
J
Operating junction temperature range
QxX8Ey
-65 to 125
°C
QxXy
-40 to 125
Note: x = voltage, y = sensitivity
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
— Standard Triac
Symbol
Test Conditions
Quadrant
QxX8E3
QxX3
QxX8E4
QxX4
Unit
I
GT
V
D
= 12V R
L
= 60
:
*o**o***
MAX.
10
25
mA
IV
TYP.
25
50
V
GT
*o**o***
MAX.
1.3
1.3
V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
: T
J
= 125°C
ALL
MIN.
0.2
0.2
V
I
H
I
T
= 200mA
MAX.
15
25
mA
dv/dt
V
D
= V
DRM
Gate Open T
J
= 125°C
400V
MIN.
25
35
V/μs
600V
15
25
(dv/dt)c
(di/dt)c = 0.43 A/ms T
J
= 125°C
TYP.
1
1
V/μs
t
gt
I
G
= 2 x I
GT
PW = 15μs I
T
= 1.13 A(pk)
TYP.
2.5
3.0
μs
Note: x = voltage