Tvs diode arrays, Low capacitance esd protection - sp3030 series, Diodes) – Littelfuse SP3030 Series User Manual
Page 2: Sp3030, Absolute maximum ratings, Thermal information, Electrical characteristics, Insertion loss (s21) i/o to gnd, Normalized capacitance vs. reverse voltage, Hdmi 1.4 eye diagram usb3.0 eye diagram
© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/22/13
TVS Diode Arrays
(SPA
®
Diodes)
Low Capacitance ESD Protection - SP3030 Series
SP3030
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
I
PP
Peak Current (t
p
=8/20μs)
3.0
A
T
OP
Operating Temperature
-40 to 125
°C
T
STOR
Storage Temperature
-55 to 150
°C
Thermal Information
Parameter
Rating
Units
Storage Temperature Range
-55 to 150
°C
Maximum Junction Temperature
150
°C
Maximum Lead Temperature
(Soldering 20-40s)
260
°C
Electrical Characteristics
(T
OP
=25ºC)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Reverse Standoff Voltage
V
RWM
5
V
Reverse Leakage Current
I
LEAK
V
R
=5V with 1pin at GND
0.1
0.5
µA
Clamp Voltage
1
V
C
I
PP
=1A, t
p
=8/20µs, Fwd
9.2
V
I
PP
=2A, t
p
=8/20µs, Fwd
10.0
V
ESD Withstand Voltage
1
V
ESD
IEC61000-4-2 (Contact)
±20
kV
IEC61000-4-2 (Air)
±30
kV
Dynamic Resistance
R
DYN
(V
C2
-V
C1
)/(I
PP2
-I
PP1
)
0.8
Ω
Diode Capacitance
1
C
I/O-I/O
Reverse Bias=0V, f=1 MHz
0.5
pF
Note: 1. Parameter is guaranteed by design and/or device characterization.
Insertion Loss (S21) I/O to GND
10
100
1000
Frequency (MHz)
-10
-8
-6
-7
-9
-4
-5
-2
-1
0
-3
A
tte
nuat
ion
(d
B)
Normalized Capacitance vs. Reverse Voltage
Bias Voltage (V)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Normalized Ca
pa
ci
ta
nc
e
(pF)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
HDMI 1.4 Eye Diagram
USB3.0 Eye Diagram