Littelfuse SP0504S Series - Manual (Page 2)

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/25/13
TVS Diode Arrays
(SPA ® Diodes)
Low Capacitance ESD Protection - SP0504S Series
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
Peak Current (t
p
=8/20μs) 4.5 A
T
OP
Operating Temperature –40 to 125 °C
T
STOR
Storage Temperature –55 to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to
150
°C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
260 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Reverse Standoff Voltage V
RWM
I
R
≤ 1µA 6.0 V
Reverse Leakage Current I
LEAK
V
R
=5V 0.5 µA
Clamp Voltage 1 V
C
I
PP
=1A, t
p
=8/20µs, Fwd 9.5 11.0 V
I
PP
=2A, t
p
=8/20µs, Fwd 10.6 13.0 V
ESD Withstand Voltage 1 V
ESD
IEC61000-4-2 (Contact) ±12 kV
IEC61000-4-2 (Air) ±15 kV
Diode Capacitance 1 C
I/O-GND
Reverse Bias=0V 0.95 1.1 1.25 pF
Reverse Bias=1.65V 0.7 0.85 1.0 pF
Diode Capacitance 1 C
I/O-I/O
Reverse Bias=0V 0.5 pF
Note: 1. Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Bias Voltage Insertion Loss (S21) I/O to GND
-20
-15
-10
-5
0
1.E+06 1.E+07 1.E+08 1.E+09 1.E+10
Frequency [Hz]
Inser
tion Loss [dB]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
1.50
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0.50
I/O Capacitance (pF)
I/O DC Bias (V)
V
CC
= 5V
V
CC
= 3.3V
V
CC
= Float