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Teccor, Brand thyristors, 4 amp sensitive & standard triacs – Littelfuse Qxx04xx Series User Manual

Page 2

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54

Revised: 09/23/13

©2013 Littelfuse, Inc

Specifications are subject to change without notice.

Teccor

®

brand Thyristors

4 Amp Sensitive & Standard Triacs

Lxx04xx & Qxx04xx Series

Electrical Characteristics

(T

J

= 25°C, unless otherwise specified)

— Sensitive Triac

(4 Quadrants)

Symbol

Test Conditions

Quadrant

Lxx04x3

Lxx04x5

Lxx04x6

Lxx04x8

Unit

I

GT

V

D

= 12V R

L

= 60

:

*o**o***

MAX.

3

5

5

10

mA

IV

3

5

10

20

V

GT

ALL

MAX.

1.3

V

V

GD

V

D

= V

DRM

R

L

= 3.3 k

: T

J

= 110°C

ALL

MIN.

0.2

V

I

H

I

T

= 100mA

MAX.

5

10

10

15

mA

dv/dt

V

D

= V

DRM

Gate Open T

J

= 100°C

400V

TYP.

25

25

30

35

V/μs

600V

15

15

20

25

(dv/dt)c

(di/dt)c = 2.16 A/ms T

J

= 110°C

TYP.

0.5

1

1

1

V/μs

t

gt

I

G

= 2 x I

GT

PW = 15μs I

T

= 5.6 A(pk)

TYP.

2.8

3.0

3.0

3.2

μs

Absolute Maximum Ratings — Standard Triacs

Symbol

Parameter

Value

Unit

I

T(RMS)

RMS on-state current

(full sine wave)

Qxx04Ly / Qxx04Dy

T

C

= 95°C

4

A

Qxx04Ry / Qxx04Vy

T

C

= 85°C

I

TSM

Non repetitive surge peak on-state current

(full cycle, T

J

initial = 25°C)

f = 50 Hz

t = 20 ms

46

A

f = 60 Hz

t = 16.7 ms

55

I

2

t

I

2

t Value for fusing

t

p

= 8.3 ms

12.5

A

2

s

di/dt

Critical rate of rise of on-state current

(I

G

= 50mA with

d 0.1μs rise time)

f = 120 Hz

T

J

= 125°C

50

A/μs

I

GTM

Peak gate trigger current

t

p

d 10 μs;

I

GT

d I

GTM

T

J

= 125°C

1.2

A

P

G(AV)

Average gate power dissipation

T

J

= 125°C

0.3

W

T

stg

Storage temperature range

-40 to 150

°C

T

J

Operating junction temperature range

-40 to 125

°C

Note: xx = voltage, y = sensitivity

Electrical Characteristics

(T

J

= 25°C, unless otherwise specified)

— Standard Triac

Symbol

Test Conditions

Quadrant

Qxx04x3

Qxx04x4

Unit

I

GT

V

D

= 12V R

L

= 60

:

*o**o***

MAX.

10

25

mA

IV

TYP.

25

50

V

GT

*o**o***

MAX.

1.3

1.3

V

V

GD

V

D

= V

DRM

R

L

= 3.3 k

: T

J

= 125°C

ALL

MIN.

0.2

0.2

V

I

H

I

T

= 200mA

MAX.

20

30

mA

dv/dt

V

D

= V

DRM

Gate Open T

J

= 125°C

400V

MIN.

40

75

V/μs

600V

30

50

800V

40

V

D

= V

DRM

Gate Open T

J

= 100°C

1000V

50

(dv/dt)c

(di/dt)c = 2.16 A/ms T

J

= 125°C

TYP.

2

2

V/μs

t

gt

I

G

= 2 x I

GT

PW = 15μs I

T

= 5.6 A(pk)

TYP.

2.5

3.0

μs

Note: xx = voltage, x = package