Littelfuse SP1003 Series - Manual (Page 2)

© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/22/13
TVS Diode Arrays
(SPA ® Diodes)
General Purpose ESD Protection - SP1003 Series
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
1 2 3 4 5 6 7
Peak Pulse Current-I
PP
(A)
Clamp Voltage (V
C
)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.
Absolute Maximum Ratings
Symbol Parameter Value Units
I
PP
Peak Pulse Current (t
p
=8/20μs) 7.0 A
T
OP
Operating Temperature –40 to 125 °C
T
STOR
Storage Temperature –55 to 150 °C
Thermal Information
Parameter Rating Units
Storage Temperature Range –55 to 150 °C
Maximum Junction Temperature 150 °C
Maximum Lead Temperature
(Soldering 20-40s)
260 °C
Electrical Characteristics (T
OP
=25ºC)
Parameter Symbol Test Conditions Min Typ Max Units
Forward Voltage Drop V
F
I
F
= 10mA 0.8 1.2 V
Reverse Voltage Drop V
R
I
R
=1mA 6.0 7.8 8.5 V
Reverse Standoff Voltage V
RWM
I
R
≤1µA 5.0 V
Reverse Leakage Current I
LEAK
V
R
=5V 100 nA
Clamp Voltage 1 V
C
I
pp
=6A t
p
=8/20µs 11.4 V
I
pp
=7A t
p
=8/20µs 12.0 V
Dynamic Resistance R
DYN
TLP, t
p
=100ns, 1/O to GND 0.25 Ω
ESD Withstand Voltage 1 V
ESD
IEC61000-4-2 (Contact Discharge) ±30 kV
IEC61000-4-2 (Air Discharge) ±30 kV
Diode Capacitance 1 C
D
Reverse Bias=0V 30 pF
Note: 1 Parameter is guaranteed by design and/or device characterization.
Capacitance vs. Reverse Bias Clamping Voltage vs. I
PP
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
DC Bias (V)
Capacitance (pF)