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Tvs diode arrays, Tvs diode array s, Lightning surge protection - sp03a-3.3 series – Littelfuse SP03A-3.3 Series User Manual

Page 2: Lightning surge protection - sp03-3.3 series, Family of products), Sp03a -3.3

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©2012 Littelfuse, Inc.

Specifications are subject to change without notice.

Please refer to

www.littelfuse.com/SPA

for current information.

132

TVS Diode Arrays

(SPA

Family of Products)

Revision: March 20, 2012

SP03A-3.3 Series

Lightning Surge Protection - SP03A-3.3 Series

TVS Diode Arrays

(SPA

Family of Products)

Lightning Surge Protection - SP03-3.3 Series

TVS Diode Arrays

(SPA

Family of Products)

Lightning Surge Protection - SP03A-3.3 Series

SP03A

-3.3

Absolute Maximum Ratings

Parameter

Rating

Units

Peak Pulse Current (8/20μs)

150

A

Peak Pulse Power (8/20μs)

3300

W

IEC 61000-4-2, Direct Discharge, (Level 4)

30

kV

IEC 61000-4-2, Air Discharge, (Level 4)

30

kV

IEC 61000-4-5 (8/20μs)

150

A

Telcordia GR 1089 (Intra-Building) (2/10μs)

100

A

ITU K.20 (5/310μs)

40

A

Electrical Characteristics (T

OP

= 25°C)

Thermal Information

Parameter

Rating

Units

SOIC Package

170

°C/W

Operating Temperature Range

-55 to 125

°C

Storage Temperature Range

-65 to 150

°C

Maximum Junction Temperature

150

°C

Maximum Lead Temperature (Soldering
20-40s) (SOIC - Lead Tips Only)

260

°C

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Reverse Stand-Off Voltage

V

RWM

I

T

≤1μA

-

-

3.3

V

Reverse Breakdown Voltage

V

BR

I

T

= 2μA

3.3

-

-

V

Snap Back Voltage

V

SB

I

T

= 50mA

3.3

-

-

V

Reverse Leakage Current

I

R

V

RWM

= 3.3V, T= 25°C

-

-

1

μA

Clamping Voltage, Line-Ground

V

C

I

PP

= 50A, t

p

=8/20 μs

-

-

13

V

Clamping Voltage, Line-Ground

V

C

I

PP

= 100A, t

p

=8/20 μs

-

-

17

V

Dynamic Resistance, Line-Ground

R

DYN

(V

C2

-V

C1

)/(I

PP2

-I

PP1

)

-

0.15

-

Ω

Clamping Voltage, Line-Line

V

C

I

PP

= 50A, t

p

=8/20 μs

-

-

15

V

Clamping Voltage, Line-Line

V

C

I

PP

= 100A, t

p

=8/20 μs

-

-

20

V

Dynamic Resistance , Line-Line

R

DYN

(V

C2

-V

C1

)/(I

PP2

-I

PP1

)

-

0.25

-

Ω

Junction Capacitance

C

j

Between I/O Pins and Ground

V

R

=0V, f= 1MHz

-

9

12

pF

Between I/O Pins

V

R

=0V, f= 1MHz

-

4.5

6

pF

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the device. This is a stress only rating and operation of the device
at these or any other conditions above those indicated in the operational sections of this
specification is not implied.

Figure 2: Current Derating Curve

Figure 1: Non-repetitive Peak Pulse Current vs. Pulse Time

Pulse decay time (μs)

1

10

100

1000

1

10

100

1000

P

eak Pulse Cur

rent (A)

P

e

rcentag

e of Rat

ed Cur

rent (%I

P

)

Ambient Temperature (C)

0

20

40

60

80

100

120

0

20

40

60

80

100

120

140

160