Littelfuse SDP TwinChip Series 3x3 QFN - Manual (Page 2)

SIDACtor ® Protection Thyristors
41
Revised: February 22, 2011
© 2011 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com for current information.
Broadband Optimized ™ Protection
Series
I
PP
I
TSM
2x10μs 1.2x50μs/8x20μs 10x700/5x310μs 10x1000μs 50 / 60 Hz
A min A min A min A min A min
F 100 80 37.5 30 15
Surge Ratings
Package Symbol Parameter Value Unit
3x3 QFN
T
J
Junction Temperature UP °C
T
STG
Storage Temperature Range UP °C
R
0JA
Thermal Resistance: Junction to Ambient 100 °C/W
Thermal Considerations
I
H
I
T
I S
I
DRM
V
DRM V T
+V -V
+I
-I
V
S
0
5
10
15
20
25
30
0 0 1 0 1 1 1 . 0
Bias Voltage (V)
Capacitance (pF)
V-I Characteristics Capacitance and Bias Voltage
-8
-40 -20 0 20 40 60 80 100 120 140 160
-6
-4
0
2
4
6
8
10
12
14
Junction Temperature (T
J
) – °C
P
ercent of
V
S
Change – % 25 °C
25°C
Case Temperature (T
C
) - ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20 0 20 40 60 80 100 120 140 160
R
atio of
I H
I H
(T
C
= 2
5
ºC)
Normalized V
S
Change vs. Junction Temperature Normalized DC Holding Current vs. Case Temperature
Notes:
- Peak pulse current rating (I
PP
) is repetitive and guaranteed for the life of the product.
- I
PP
SBUJOHTBQQMJDBCMFPWFSUFNQFSBUVSFSBOHFPG$UP$
- The device must initially be in thermal equilibrium with -40°C < T
J
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