Tvs diode arrays, General purpose esd protection - sp1008 series, Diodes) – Littelfuse SP1008 Series User Manual
Page 3
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© 2013 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 10/21/13
TVS Diode Arrays
(SPA
®
Diodes)
General Purpose ESD Protection - SP1008 Series
Time
Te
mperatur
e
T
P
T
L
T
S(max)
T
S(min)
25
t
P
t
L
t
S
time to peak temperature
Preheat
Preheat
Ramp-up
Ramp-up
Ramp-down
Ramp-do
Critical Zone
T
L
to T
P
Critical Zone
T
L
to T
P
Reflow Condition
Pb – Free assembly
Pre Heat
- Temperature Min (T
s(min)
)
150°C
- Temperature Max (T
s(max)
)
200°C
- Time (min to max) (t
s
)
60 – 180 secs
Average ramp up rate (Liquidus) Temp
(T
L
) to peak
3°C/second max
T
S(max)
to T
L
- Ramp-up Rate
3°C/second max
Reflow
- Temperature (T
L
) (Liquidus)
217°C
- Temperature (t
L
)
60 – 150 seconds
Peak Temperature (T
P
)
260
+0/-5
°C
Time within 5°C of actual peak
Temperature (t
p
)
20 – 40 seconds
Ramp-down Rate
6°C/second max
Time 25°C to peak Temperature (T
P
)
8 minutes Max.
Do not exceed
260°C
Soldering Parameters
Pulse Waveform
Capacitance vs. Reverse Bias
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
110%
0.0 5.0 10.0 15.0 20.0 25.0 30.0
Time (μs)
Percent of
I
PP
Insertion Loss (S21) I/O to GND
Clamping Voltage vs. I
PP
10.0
9.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I/O Capacitance (pF)
I/O Bias Voltage (V)
Clamp Voltage (V
C
)
0
2
4
6
8
10
12
14
Peak Pulse Current-I
PP
(A)
1.0
1.5
1.5
2.0
1.5
2.5
1.5
-5
-10
-15
-20
-25
0
-30
-35
A
ttenuation (dB)
-40
-45
Frequency (MHz)
10
100
1000