Vishay semiconductors – C&H Technology 70MT060WSP User Manual
Page 8
70MT060WSP
www.vishay.com
Vishay Semiconductors
Revision: 07-Sep-11
7
Document Number: 93410
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Fig. 16 - Maximum Continuous Forward Current vs.
Case Temperature PFC Diode
Fig. 17 - Typical FRED Pt
®
Chopper Diode Reverse Current vs.
Reverse Voltage
Fig. 18 - Typical IGBT Energy Loss vs. I
C
T
J
= 125 °C, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 19 - Typical IGBT Energy Loss vs. R
g
T
J
= 125 °C, I
C
= 70 A, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 20 - Typical IGBT Switching Time vs. I
C
T
J
= 125 °C, V
CC
= 360 V, V
GE
= 15 V, L = 500 μH, R
g
= 5
Fig. 21 - Typical IGBT Switching Time vs. R
g
T
J
= 125 °C, I
C
= 70 A, V
CE
= 360 V, V
GE
= 15 V, L = 500 μH
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
80
60
40
20
100
0
80
120
160
140
0
40
60
100
20
93410_16
I
R
(mA)
V
R
(V)
100
200
300
400
500
600
0.001
0.01
0.1
1
93410_17
T
J
= 150 °C
T
J
= 25 °C
Energy (mJ)
I
C
(A)
0
20
60
40
80
0
93410_18
0.4
0.3
0.2
0.1
E
on
E
off
Energy (mJ)
R
g
(
Ω)
0
10
20
30
40
50
0
93410_19
1.6
1.2
0.8
0.4
E
on
E
off
S
witching Time (ns)
I
C
(A)
0
20
60
40
80
10
93410_20
1000
100
t
d(off)
t
d(on)
t
f
t
r
S
witching Time (ns)
R
g
(
Ω)
0
10
30
40
20
50
10
93410_21
1000
100
t
d(off)
t
d(on)
t
f
t
r