C&H Technology 70MT060WSP - Manual (Page 2)

70MT060WSP
www.vishay.com
Vishay Semiconductors
Revision: 07-Sep-11 1 Document Number: 93410
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MTP IGBT Power Module Primary Rectifier and PFC
FEATURES
• Input rectifier bridge
• PFC stage with warp 2 IGBT and FRED Pt ®
hyperfast diode
• Very low stray inductance design for high
speed operation
• Integrated thermistor
• Isolated baseplate
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Lower conduction losses and switching losses
• Higher switching frequency up to 150 kHz
• Optimized for welding, UPS, and SMPS applications
• PCB solderable terminals
• Direct mounting to heatsink
PRODUCT SUMMARY
INPUT BRIDGE DIODE, T
J
= 150 °C
V
RRM
1200 V
l
O
at 80 °C 48 A
V
FM
at 25 °C at 20 A 1.05 V
PFC IGBT, T
J
= 150 °C
V
CES
600 V
V
CE(sat)
at 25 °C at 40 A 1.93 V
I
C
at 80°C 66 A
FRED Pt ® PFC DIODE, T
J
= 150 °C
V
R
600 V
I
F(DC)
at 80 °C 55 A
V
F
at 25 °C at 40 A 1.76 V
FRED Pt ® AP DIODE, T
J
= 150 °C
V
R
600 V
I
F(DC)
at 80 °C 13 A
V
F
at 25 °C at 4 A 1.1 V
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Input
Rectifier
Bridge
Repetitive peak reverse voltage V
RRM
1200 V
Maximum average output current
T
J
= 150 °C maximum
I
O
T
C
= 80 °C 48
A
Surge current (Non-repetitive) I
FSM
Rated V
RRM
applied 250
Maximum I 2 t for fusing I 2 t 10 ms, sine pulse 316 A 2 s
PFC IGBT
Collector to emitter voltage V
CES
T
J
= 25 °C 600
V
Gate to emitter voltage V
GE
I
GES
max. ± 250 ns ± 20
Maximum continuous collector current
at V
GE
= 15 V, T
J
= 150 °C maximum
I
C
T
C
= 25 °C 96
A
T
C
= 80 °C 66
Pulsed collector current I
CM
(1) 250
Clamped inductive load current I
LM
250
Maximum power dissipation P
D
T
C
= 25 °C 378 W