Vishay semiconductors, Electrical specifications (t, Absolute maximum ratings – C&H Technology 70MT060WSP User Manual
Page 3
70MT060WSP
www.vishay.com
Vishay Semiconductors
Revision: 07-Sep-11
2
Document Number: 93410
For technical questions within your region:
,
,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
PFC Diode
Repetitive peak reverse voltage
V
RRM
600
V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F
T
C
= 25 °C
82
A
T
C
= 80 °C
55
Maximum power dissipation
P
D
T
C
= 25 °C
181
W
Maximum non-repetitive peak current
I
FSM
T
C
= 25 °C
360
A
AP Diode
Repetitive peak reverse voltage
V
RRM
600
V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F
T
C
= 25 °C
21
A
T
C
= 80 °C
13
Maximum power dissipation P
D
T
C
= 25 °C
32
W
Maximum non-repetitive peak current
I
FSM
T
C
= 25 °C
60
A
Maximum operating junction temperature
T
J
150
°C
Storage temperature range
T
Stg
- 40 to + 150
RMS isolation voltage
V
ISOL
V
RMS
t = 1 s, T
J
= 25 °C
3500
W
R CONDUCTION PER JUNCTION - SINGLE PHASE BRIDGE DIODE
DEVICES
SINE HALF WAVE CONDUCTION
RECTANGULAR WAVE CONDUCTION
UNITS
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
70MT060WSP
0.273
0.302
0.322
0.338
0.350
0.236
0.288
0.294
0.287
0.235
°C/W
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Input
Rectifier
Bridge
Blocking voltage
BV
RRM
I
R
= 250 μA
1200
-
-
V
Reverse leakage current
I
RRM
V
RRM
= 1200 V
-
-
0.1
mA
V
RRM
= 1200 V, T
J
= 150 °C
-
-
3.0
Forward voltage drop
V
FM
I
F
= 20 A
-
1.05
1.2
V
I
F
= 20 A, T
J
= 150 °C
-
0.94
1.0
Forward slope resistance
rt
T
J
= 150 °C
-
-
8.7
m
Conduction threshold voltage
V
T
-
-
0.94
V
PFC IGBT
Collector to emitter
breakdown voltage
BV
CES
V
GE
= 0 V, I
C
= 0.5 mA
600
-
-
V
Temperature coefficient of
breakdown voltage
V
BR(CES)
/
T
J
I
C
= 0.5 mA (25 °C to 125 °C)
-
0.6
-
V/°C
Collector to emitter voltage
V
CE(ON)
V
GE
15 V, I
C
= 40 A
-
1.93
2.15
V
V
GE
= 15 V, l
C
= 40 A, T
J
= 125 °C
-
2.30
2.55
Gate threshold voltage
V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA
2.9
-
5.6
V
Collector to emitter
leakage current
I
CES
V
GE
= 0 V, V
CE
= 600 V
-
-
0.1
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C
-
-
1
Gate to emitter leakage
I
GES
V
GE
= ± 20 V
-
-
± 100
nA
PFC Diode
Forward voltage drop
V
FM
I
F
= 40 A
-
1.76
2.23
V
I
F
= 40 A, T
J
= 125 °C
-
1.34
1.62
Blocking voltage
BV
RM
I
R
= 0.5 mA
600
-
-
Reverse leakage current
I
RM
V
RRM
= 600 V
-
-
75
μA
V
RRM
= 600 V, T
J
= 125 °C
-
-
0.5
mA
AP Diode
Forward voltage drop
V
FM
I
F
= 4 A
-
1.1
1.28
V
I
F
= 4 A, T
J
= 125 °C
-
0.95
1.09
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS