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Switching characteristics – Cypress CY7C1381F User Manual

Page 20

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CY7C1381D, CY7C1381F

CY7C1383D, CY7C1383F

Document #: 38-05544 Rev. *F

Page 20 of 29

Switching Characteristics

Over the Operating Range

[20, 21]

Parameter

Description

133 MHz

100 MHz

Unit

Min

Max

Min

Max

t

POWER

V

DD

(Typical) to the first Access

[22]

1

1

ms

Clock
t

CYC

Clock Cycle Time

7.5

10

ns

t

CH

Clock HIGH

2.1

2.5

ns

t

CL

Clock LOW

2.1

2.5

ns

Output Times
t

CDV

Data Output Valid After CLK Rise

6.5

8.5

ns

t

DOH

Data Output Hold After CLK Rise

2.0

2.0

ns

t

CLZ

Clock to Low-Z

[23, 24, 25]

2.0

2.0

ns

t

CHZ

Clock to High-Z

[23, 24, 25]

0

4.0

0

5.0

ns

t

OEV

OE LOW to Output Valid

3.2

3.8

ns

t

OELZ

OE LOW to Output Low-Z

[23, 24, 25]

0

0

ns

t

OEHZ

OE HIGH to Output High-Z

[23, 24, 25]

4.0

5.0

ns

Setup Times
t

AS

Address Setup Before CLK Rise

1.5

1.5

ns

t

ADS

ADSP, ADSC Setup Before CLK Rise

1.5

1.5

ns

t

ADVS

ADV Setup Before CLK Rise

1.5

1.5

ns

t

WES

GW, BWE, BW

[A:D]

Setup Before CLK Rise

1.5

1.5

ns

t

DS

Data Input Setup Before CLK Rise

1.5

1.5

ns

t

CES

Chip Enable Setup

1.5

1.5

ns

Hold Times
t

AH

Address Hold After CLK Rise

0.5

0.5

ns

t

ADH

ADSP, ADSC Hold After CLK Rise

0.5

0.5

ns

t

WEH

GW, BWE, BW

[A:D]

Hold After CLK Rise

0.5

0.5

ns

t

ADVH

ADV Hold After CLK Rise

0.5

0.5

ns

t

DH

Data Input Hold After CLK Rise

0.5

0.5

ns

t

CEH

Chip Enable Hold After CLK Rise

0.5

0.5

ns

Notes:

20. Timing reference level is 1.5V when V

DDQ

= 3.3V and is 1.25V when V

DDQ

= 2.5V.

21. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
22. This part has a voltage regulator internally; t

POWER

is the time that the power needs to be supplied above V

DD

(minimum) initially, before a read or write operation

can be initiated.

23. t

CHZ

, t

CLZ

,t

OELZ

, and t

OEHZ

are specified with AC test conditions shown in part (b) of

AC Test Loads and Waveforms on page 19

. Transition is measured ± 200

mV from steady-state voltage.

24. At any given voltage and temperature, t

OEHZ

is less than t

OELZ

and t

CHZ

is less than t

CLZ

to eliminate bus contention between SRAMs when sharing the same

data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to

achieve High-Z prior to Low-Z under the same system condition.

25. This parameter is sampled and not 100% tested.

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