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Cypress CY14B104M User Manual

Page 29

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PRELIMINARY

CY14B104K, CY14B104M

Document #: 001-07103 Rev. *K

Page 29 of 31

*F

1890926

See ECN

vsutmp8/AE-

SA

Added Footnote 1, 2 and 3.

Updated Logic Block diagram

Updated Pin definition Table

Changed 8Mb Address expansion Pin from Pin 43 to Pin 42 for 44-TSOP II (x8)

package.

Corrected typo in V

IL

min spec

Changed the value of I

CC3

from 25mA to 13mA

Changed I

SB

value from 1mA to 2mA

Updated ordering information table

Rearranging of Footnotes.

Changed Package diagrams title.

The pins X1 and X2 interchanged in 44TSOP II(x8) and 54TSOP II(x16) pinout

diagram.

*G

2267286

See ECN

GVCH/PYRS Rearranging of “Features”

Added BHE and BLE Information in Pin Definitions Table

Updated Figure 2 (Autostore mode)

Updated footnote 6

RTC Register Map:Register 0x1FFF6:Changed D4 from ABE to 0

Register Map Detail:0x1FFF6:Changed D4 from ABE to 0 and removed ABE

information

Changed I

CC2

& I

CC4

from 3mA to 6mA

Changed I

CC3

from 13mA to 15mA

Changed I

SB

from 2mA to 3mA

Added input leakage current (I

IX

) for HSB in DC Electrical Characteristics table

Changed Vcap from 35uF min and 57uF max value to 54uF min and 82uF max

value

Corrected typo in t

DBE

value from 22ns to 20ns for 45ns part

Corrected typo in t

HZBE

value from 22ns to 15ns for 45ns part

Corrected typo in t

AW

value from 15ns to 10ns for 15ns part

Changed Vrtccap max from 2.7V to 3.6V

Changed tRECALL from 100 to 200us

Added footnote 10, 29

Reframed footnote 18, 25

Added footnote 18 to figure 8 (SRAM WRITE Cycle #1)

Added footnote 18, 26 and 27 to figure 9 (SRAM WRITE Cycle #2)

*H

2483627

See ECN

GVCH/PYRS Removed 8 mA typical I

CC

at 200 ns cycle time in Feature section

Referenced footnote 9 to I

CC3

in DC Characteristics table

Changed I

CC3

from 15 mA to 35 mA

Changed Vcap minimum value from 54 uF to 61 uF

Changed t

AVAV

to t

RC

Changed V

RTCcap

minimum value from 1.2V to 1.5V

Figure 12:Changed t

SA

to t

AS

and t

SCE to

t

CW

Document Title: CY14B104K/CY14B104M 4 Mbit (512K x 8/256K x 16) nvSRAM with Real Time Clock

Document Number: 001-07103

Rev. ECN No. Submission

Date

Orig. of

Change

Description of Change

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