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Switching characteristics – Cypress Perform CY7C1370D User Manual

Page 20

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CY7C1370D
CY7C1372D

Document #: 38-05555 Rev. *F

Page 20 of 28

Switching Characteristics

Over the Operating Range

[23, 24]

Parameter

Description

–250

–200

–167

Unit

Min.

Max.

Min.

Max.

Min.

Max.

t

Power

[19]

V

CC

(typical) to the first access read or write

1

1

1

ms

Clock

t

CYC

Clock Cycle Time

4.0

5

6

ns

F

MAX

Maximum Operating Frequency

250

200

167

MHz

t

CH

Clock HIGH

1.7

2.0

2.2

ns

t

CL

Clock LOW

1.7

2.0

2.2

ns

Output Times

t

CO

Data Output Valid After CLK Rise

2.6

3.0

3.4

ns

t

EOV

OE LOW to Output Valid

2.6

3.0

3.4

ns

t

DOH

Data Output Hold After CLK Rise

1.0

1.3

1.3

ns

t

CHZ

Clock to High-Z

[20, 21, 22]

2.6

3.0

3.4

ns

t

CLZ

Clock to Low-Z

[20, 21, 22]

1.0

1.3

1.3

ns

t

EOHZ

OE HIGH to Output High-Z

[20, 21, 22]

2.6

3.0

3.4

ns

t

EOLZ

OE LOW to Output Low-Z

[20, 21, 22]

0

0

0

ns

Set-up Times

t

AS

Address Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

DS

Data Input Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

CENS

CEN Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

WES

WE, BW

x

Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

ALS

ADV/LD Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

CES

Chip Select Set-up

1.2

1.4

1.5

ns

Hold Times

t

AH

Address Hold After CLK Rise

0.3

0.4

0.5

ns

t

DH

Data Input Hold After CLK Rise

0.3

0.4

0.5

ns

t

CENH

CEN Hold After CLK Rise

0.3

0.4

0.5

ns

t

WEH

WE, BW

x

Hold After CLK Rise

0.3

0.4

0.5

ns

t

ALH

ADV/LD Hold after CLK Rise

0.3

0.4

0.5

ns

t

CEH

Chip Select Hold After CLK Rise

0.3

0.4

0.5

ns

Notes:

19. This part has a voltage regulator internally; t

Power

is the time power needs to be supplied above V

DD

minimum initially, before a Read or Write operation can be

initiated.

20. t

CHZ

, t

CLZ

, t

EOLZ

, and t

EOHZ

are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

21. At any given voltage and temperature, t

EOHZ

is less than t

EOLZ

and t

CHZ

is less than t

CLZ

to eliminate bus contention between SRAMs when sharing the same

data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.

22. This parameter is sampled and not 100% tested.
23. Timing reference is 1.5V when V

DDQ

= 3.3V and is 1.25V when V

DDQ

= 2.5V.

24. Test conditions shown in (a) of AC Test Loads unless otherwise noted.

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