Cypress Perform CY7C1370D - Manual (Page 18)

CY7C1370D
CY7C1372D
Document #: 38-05555 Rev. *F Page 18 of 28
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
DD
Relative to GND........ –0.5V to +4.6V
Supply Voltage on V
DDQ
Relative to GND ...... –0.5V to +V
DD
DC to Outputs in Tri-State ................... –0.5V to V
DDQ
+ 0.5V
DC Input Voltage ....................................–0.5V to V
DD
+ 0.5V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Range
Ambient
Temperature V
DD
V
DDQ
Commercial 0°C to +70°C 3.3V–5%/+10% 2.5V –5% to
V
DD Industrial –40°C to +85°C
Electrical Characteristics Over the Operating Range
[16, 17]
Parameter Description Test Conditions Min. Max. Unit
V
DD
Power Supply Voltage 3.135 3.6 V
V
DDQ
I/O Supply Voltage for 3.3V I/O 3.135 V
DD
V
for 2.5V I/O 2.375 2.625 V
V
OH
Output HIGH Voltage for 3.3V I/O, I
OH
= –4.0 mA 2.4 V
for 2.5V I/O, I
OH
= –1.0 mA 2.0 V
V
OL
Output LOW Voltage for 3.3V I/O, I
OL
= 8.0 mA 0.4 V
for 2.5V I/O, I
OL
= 1.0 mA 0.4 V
V
IH
Input HIGH Voltage [16] for 3.3V I/O 2.0 V
DD
+ 0.3V V
for 2.5V I/O 1.7 V
DD
+ 0.3V V
V
IL
Input LOW Voltage
[16]
for 3.3V I/O –0.3 0.8 V
for 2.5V I/O –0.3 0.7 V
I
X
Input Leakage Current
except ZZ and MODE GND
≤ V
I
≤ V
DDQ
–5 5
µA
Input Current of MODE Input = V
SS
–30
µA
Input = V
DD
5
µA
Input Current of ZZ Input = V
SS
–5
µA
Input = V
DD
30
µA
I
OZ
Output Leakage Current GND
≤ V
I
≤ V
DDQ,
Output Disabled –5 5
µA
I
DD
V
DD
Operating Supply V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
4-ns cycle, 250 MHz 350 mA
5-ns cycle, 200 MHz 300 mA
6-ns cycle, 167 MHz 275 mA
I
SB1
Automatic CE
Power-down
Current—TTL Inputs Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
, f = f
MAX
=
1/t
CYC
4-ns cycle, 250 MHz 160 mA
5-ns cycle, 200 MHz 150 mA
6-ns cycle, 167 MHz 140 mA
I
SB2
Automatic CE
Power-down
Current—CMOS Inputs Max. V
DD
, Device Deselected,
V
IN
≤ 0.3V or V
IN
> V
DDQ
− 0.3V,
f = 0
All speed grades 70 mA
I
SB3
Automatic CE
Power-down
Current—CMOS Inputs Max. V
DD
, Device Deselected,
V
IN
≤ 0.3V or V
IN
> V
DDQ
− 0.3V,
f = f
MAX
= 1/t
CYC
4-ns cycle, 250 MHz 135 mA
5-ns cycle, 200 MHz 130 mA
6-ns cycle, 167 MHz 125 mA
I
SB4
Automatic CE
Power-down
Current—TTL Inputs Max. V
DD
, Device Deselected,
V
IN
≥ V
IH
or V
IN
≤ V
IL
, f = 0
All speed grades 80 mA
Notes:
16. Overshoot: V
IH
(AC) < V
DD
+1.5V (Pulse width less than t
CYC
/2), undershoot: V
IL
(AC)> –2V (Pulse width less than t
CYC
/2).
17. T
Power-up
: Assumes a linear ramp from 0V to V
DD
(min.) within 200 ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD
.
[+] Feedback