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Maximum ratings, Operating range, Electrical characteristics – Cypress CY7C1336H User Manual

Page 7

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PRELIMINARY

CY7C1336H

Document #: 001-00210 Rev. *A

Page 7 of 15

Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)

Storage Temperature ................................. –65

°C to +150°C

Ambient Temperature with
Power Applied............................................. –55

°C to +125°C

Supply Voltage on V

DD

Relative to GND........ –0.5V to +4.6V

DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V

DDQ

+ 0.5V

DC Input Voltage ....................................–0.5V to V

DD

+ 0.5V

Current into Outputs (LOW)......................................... 20 mA

Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)

Latch-up Current..................................................... >200 mA

Operating Range

Range

Ambient

Temperature

]

V

DD

V

DDQ

Commercial

0°C to +70°C

3.3V

−5%/+10%

3.3V –5%

to V

DD

Industrial

–40°C to +85°C

Electrical Characteristics

Over the Operating Range

[7, 8]

Parameter

Description

Test Conditions

Min.

Max.

Unit

V

DD

Power Supply Voltage

3.135

3.6

V

V

DDQ

I/O Supply Voltage

3.135

3.6

V

V

OH

Output HIGH Voltage

for 3.3V I/O, I

OH

= –4.0 mA

2.4

V

V

OL

Output LOW Voltage

for 3.3V I/O, I

OL

= 8.0 mA

0.4

V

V

IH

Input HIGH Voltage

for 3.3V I/O

2.0

V

DD

+ 0.3V

V

V

IL

Input LOW Voltage

[7]

for 3.3V I/O

–0.3

0.8

V

I

X

Input Leakage Current
except ZZ and MODE

GND

≤ V

I

≤ V

DDQ

−5

5

µA

Input Current of MODE

Input = V

SS

–30

µA

Input = V

DD

5

µA

Input Current of ZZ

Input = V

SS

–5

µA

Input = V

DD

30

µA

I

OZ

Output Leakage Current

GND

≤ V

I

≤ V

DDQ

, Output Disabled

–5

5

µA

I

DD

V

DD

Operating Supply

Current

V

DD

= Max., I

OUT

= 0 mA,

f = f

MAX

= 1/t

CYC

7.5-ns cycle, 133 MHz

225

mA

10-ns cycle, 100 MHz

205

mA

I

SB1

Automatic CE Power-Down
Current—TTL Inputs

Max. V

DD

, Device Deselected,

V

IN

≥ V

IH

or V

IN

≤ V

IL

, f = f

MAX,

inputs switching

7.5-ns cycle, 133 MHz

90

mA

10-ns cycle, 100 MHz

80

mA

I

SB2

Automatic CE Power-Down
Current—CMOS Inputs

Max. V

DD

, Device Deselected,

V

IN

≥ V

DD

– 0.3V or V

IN

≤ 0.3V,

f = 0, inputs static

All speeds

40

mA

I

SB3

Automatic CE Power-Down
Current—CMOS Inputs

Max. V

DD

, Device Deselected,

V

IN

≥ V

DDQ

– 0.3V or V

IN

≤ 0.3V,

f = f

MAX

, inputs switching

7.5-ns cycle, 133 MHz

75

mA

10-ns cycle, 100 MHz

65

mA

I

SB4

Automatic CE Power-Down
Current—TTL Inputs

Max. V

DD

, Device Deselected,

V

IN

≥ V

DD

– 0.3V or V

IN

≤ 0.3V,

f = 0, inputs static

All speeds

45

mA

Notes:

7. Overshoot: V

IH

(AC) < V

DD

+1.5V (Pulse width less than t

CYC

/2), undershoot: V

IL

(AC) > –2V (Pulse width less than t

CYC

/2).

8. T

Power-up

: Assumes a linear ramp from 0v to V

DD

(min.) within 200 ms. During this time V

IH

< V

DD

and V

DDQ

< V

DD

.

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