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Switching characteristics – Cypress CY7C1462AV33 User Manual

Page 19

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CY7C1460AV33
CY7C1462AV33
CY7C1464AV33

Document #: 38-05353 Rev. *D

Page 19 of 27

Switching Characteristics

Over the Operating Range

[22, 23]

Parameter

Description

–250

–200

–167

Unit

Min.

Max.

Min.

Max.

Min.

Max.

t

Power

[18]

V

CC

(typical) to the first access read or write

1

1

1

ms

Clock

t

CYC

Clock Cycle Time

4.0

5.0

6.0

ns

F

MAX

Maximum Operating Frequency

250

200

167

MHz

t

CH

Clock HIGH

1.5

2.0

2.4

ns

t

CL

Clock LOW

1.5

2.0

2.4

ns

Output Times

t

CO

Data Output Valid After CLK Rise

2.6

3.2

3.4

ns

t

EOV

OE LOW to Output Valid

2.6

3.0

3.4

ns

t

DOH

Data Output Hold After CLK Rise

1.0

1.5

1.5

ns

t

CHZ

Clock to High-Z

[19, 20, 21]

2.6

3.0

3.4

ns

t

CLZ

Clock to Low-Z

[19, 20, 21]

1.0

1.3

1.5

ns

t

EOHZ

OE HIGH to Output High-Z

[19, 20, 21]

2.6

3.0

3.4

ns

t

EOLZ

OE LOW to Output Low-Z

[19, 20, 21]

0

0

0

ns

Set-up Times

t

AS

Address Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

DS

Data Input Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

CENS

CEN Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

WES

WE, BW

x

Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

ALS

ADV/LD Set-up Before CLK Rise

1.2

1.4

1.5

ns

t

CES

Chip Select Set-up

1.2

1.4

1.5

ns

Hold Times

t

AH

Address Hold After CLK Rise

0.3

0.4

0.5

ns

t

DH

Data Input Hold After CLK Rise

0.3

0.4

0.5

ns

t

CENH

CEN Hold After CLK Rise

0.3

0.4

0.5

ns

t

WEH

WE, BW

x

Hold After CLK Rise

0.3

0.4

0.5

ns

t

ALH

ADV/LD Hold after CLK Rise

0.3

0.4

0.5

ns

t

CEH

Chip Select Hold After CLK Rise

0.3

0.4

0.5

ns

Notes:

18. This part has a voltage regulator internally; tpower is the time power needs to be supplied above Vdd minimum initially, before a Read or Write operation can be

initiated.

19. t

CHZ

, t

CLZ

, t

EOLZ

, and t

EOHZ

are specified with AC test conditions shown in (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.

20. At any given voltage and temperature, t

EOHZ

is less than t

EOLZ

and t

CHZ

is less than t

CLZ

to eliminate bus contention between SRAMs when sharing the same

data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.

21. This parameter is sampled and not 100% tested.
22. Timing reference is 1.5V when V

DDQ=

3.3V and is 1.25V when V

DDQ=

2.5V.

23. Test conditions shown in (a) of AC Test Loads unless otherwise noted.

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