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Cypress CY7C1305BV25 User Manual

Page 21

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CY7C1307BV25

CY7C1305BV25

Document #: 38-05630 Rev. *A

Page 21 of 21

Document History Page

Document Title: CY7C1305BV25/CY7C1307BV25 18-Mbit Burst of Four Pipelined SRAM with QDR™ Architecture
Document Number: 38-05630

REV.

ECN NO.

Issue Date

Orig. of

Change

Description of Change

**

253049

See ECN

SYT

New Data Sheet

*A

436864

See ECN

NXR

Converted from Preliminary to Final.
Removed 133 MHz & 100 MHz from product offering.
Included industrial Operating Range.
Changed C/C Description in the Features Section & Pin Description Table.
Changed t

TCYC

from 100 ns to 50 ns, changed t

TF

from 10 MHz to 20 MHz

and changed t

TH

and t

TL

from 40 ns to 20 ns in TAP AC Switching

Characteristics table
Modified the ZQ pin definition as follows:
Alternately, this pin can be connected directly to V

DDQ

, which enables the

minimum impedance mode
Included Maximum Ratings for Supply Voltage on V

DDQ

Relative to GND

Changed the Maximum Ratings for DC Input Voltage from V

DDQ

to V

DD.

Modified the Description of I

X

from Input Load current to Input Leakage

Current on page # 16.
Modified test condition in note# 16 from V

DDQ

< V

DD

to

V

DDQ

≤ V

DD

Updated the Ordering Information table and replaced the Package Name
Column with Package Diagram.

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