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Capacitance, Thermal resistance, Ac test loads and waveforms – Cypress CY62146DV30 User Manual

Page 4: Data retention characteristics, Data retention waveform

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CY62146DV30

Document #: 38-05339 Rev. *A

Page 4 of 11

Capacitance

(for all packages)

[9]

Parameter

Description

Test Conditions

Max.

Unit

C

IN

Input Capacitance

T

A

= 25°C, f = 1 MHz,

V

CC

= V

CC(typ)

10

pF

C

OUT

Output Capacitance

10

pF

Thermal Resistance

[9]

Parameter

Description

Test Conditions

BGA

TSOP II

Unit

Θ

JA

Thermal Resistance

(Junction to Ambient)

Still Air, soldered on a 3 × 4.5 inch, four-layer

printed circuit board

72

75.13

°C/W

Θ

JC

Thermal Resistance

(Junction to Case)

8.86

8.95

°C/W

AC Test Loads and Waveforms

[10]

Parameters

2.50V

3.0V

Unit

R1

16667

1103

R2

15385

1554

R

TH

8000

645

V

TH

1.20

1.75

V

Data Retention Characteristics

(Over the Operating Range)

Parameter

Description

Conditions

Min. Typ.

[5]

Max.

Unit

V

DR

V

CC

for Data Retention

1.5

V

I

CCDR

Data Retention Current

V

CC

= 1.5V

CE > V

CC

– 0.2V,

V

IN

> V

CC

– 0.2V or V

IN

< 0.2V

L

9

µA

LL

6

t

CDR

[9]

Chip Deselect to Data Retention Time

0

ns

t

R

[11]

Operation Recovery Time

t

RC

ns

V

CC

V

CC

OUTPUT

R2

50 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10%

90%

10%

Rise Time = 1 V/ns

Fall Time = 1 V/ns

OUTPUT

V

Equivalent to:

THÉ

VENIN EQUIVALENT

ALL INPUT PULSES

R

TH

R1

Data Retention Waveform

Notes:

9. Tested initially and after any design or process changes that may affect these parameters.

10. Test condition for the 45 ns part is a load capacitance of 30 pF.

11. Full device operation requires linear V

CC

ramp from V

DR

to V

CC(min.)

> 100

µs or stable at V

CC(min.)

> 100

µs.

V

CC(min)

V

CC(min)

t

CDR

V

DR

> 1.5 V

DATA RETENTION MODE

t

R

V

CC

CE

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