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Maximum ratings, Operating range, Electrical characteristics – Cypress CY62146DV30 User Manual

Page 3

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CY62146DV30

Document #: 38-05339 Rev. *A

Page 3 of 11

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with

Power Applied.............................................–55°C to +125°C
Supply Voltage to Ground

Potential ......................................–0.3V to + V

CC(MAX)

+ 0.3V

DC Voltage Applied to Outputs

in High-Z State

[6, 7]

.........................–0.3V to V

CC(MAX)

+ 0.3V

DC Input Voltage

[6, 7]

..................... –0.3V to V

CC(MAX)

+ 0.3V

Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V

(per MIL-STD-883, Method 3015)
Latch-up Current...................................................... >200 mA

Operating Range

Device

Range

Ambient Tem-

perature (T

A

)

V

CC

[8]

CY62146DV30L Industrial –40°C to +85°C 2.20V to 3.60V
CY62146DV30LL

Electrical Characteristics

Over the Operating Range

Parameter Description

Test Conditions

CY62146DV30-45

CY62146DV30-55

CY62146DV30-70

Unit

Min. Typ.

[5]

Max.

Min. Typ.

[5]

Max.

Min. Typ.

[5]

Max.

V

OH

Output HIGH

Voltage

I

OH

= –0.1 mA V

CC

= 2.20V

2.0

2.0

2.0

V

I

OH

= –1.0 mA V

CC

= 2.70V

2.4

2.4

2.4

V

V

OL

Output LOW

Voltage

I

OL

= 0.1 mA V

CC

= 2.20V

0.4

0.4

0.4

V

I

OL

= 2.1 mA V

CC

= 2.70V

0.4

0.4

0.4

V

V

IH

Input HIGH

Voltage

V

CC

= 2.2V to 2.7V

1.8

V

CC

+

0.3V

1.8

V

CC

+

0.3V

1.8

V

CC

+

0.3V

V

V

CC

= 2.7V to 3.6V

2.2

V

CC

+

0.3V

2.2

V

CC

+

0.3V

2.2

V

CC

+

0.3V

V

V

IL

Input LOW

Voltage

V

CC

= 2.2V to 2.7V

–0.3

0.6

–0.3

0.6

–0.3

0.6

V

V

CC

= 2.7V to 3.6V

–0.3

0.8

–0.3

0.8

–0.3

0.8

V

I

IX

Input Leakage

Current

GND < V

I

< V

CC

–1

+1

–1

+1

–1

+1

µA

I

OZ

Output

Leakage

Current

GND < V

O

< V

CC

, Output

Disabled

–1

+1

–1

+1

–1

+1

µA

I

CC

V

CC

Operating

Supply

Current

f = f

MAX

=

1/t

RC

V

CC

= V

CCmax

I

OUT

= 0 mA

CMOS levels

10

20

8

15

8

15

mA

f = 1 MHz

1.5

3

1.5

3

1.5

3

mA

I

SB1

Automatic

CE

Power-down

Current —

CMOS

Inputs

CE > V

CC

−0.2V,

V

IN

>V

CC

–0.2V, V

IN

<0.2V)

f = f

MAX

(Address and Data

Only),

f = 0 (OE, WE, BHE and

BLE), V

CC

= 3.60V

L

2

12

2

12

2

12

µA

LL

8

8

8

I

SB2

Automatic

CE

Power-down

Current —

CMOS Inputs

CE > V

CC

– 0.2V,

V

IN

> V

CC

– 0.2V or V

IN

<

0.2V,

f = 0, V

CC

= 3.60V

L

2

12

2

12

2

12

µA

LL

8

8

8

Notes:

6. V

IL(min.)

= –2.0V for pulse durations less than 20 ns.

7. V

IH(max)

= V

CC

+0.75V for pulse durations less than 20 ns.

8. Full device AC operation assumes a 100-

µs ramp time from 0 to V

CC

(min) and 200

µs wait time after V

CC

stabilization.

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