Silicon Power CCS AC 14N40_N-Type Semiconductor Discharge Switch, Bare Die - Manual (Page 5)

Packaging and Handling
o
V GE =15V
T =125 o C, V =15V
1. Use of a seperate gate return path instead of the cathode power contact is recomended to minimize the effects of
rapidly changing Anode-Cathode currents.
2. Shorting resistor R
GK
is application specific. It can control the gate drive requirements and some device
properties. However, R
GK
= 10 Ohms satisfies most application requirements.
3. Installation reflow temperature should not exceed 260 o C or internal package degradation may result.
4. Proper handling procedures must be observed to prevent electrostatic discharge which may result in permanent
damage to the gate of the device.
5. Device Storage: Must Comply to MSL Level Six (6)
Reference IPC/JEDEC J-STD-033 (*)
Solidtron TM
N-Type Semiconductor Discharge
Switch, Bare Die
Data Sheet (Rev 0)
CCSAC14N40A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Fax: 610-407-3688
Dimensions
Revision History
Rev EA #
0 08192009-NB-0035
CAO 08/19/09
Date Nature of Change
08-19-2009 Initial Issue
CAO 08/19/09