Silicon Power CCS TA 14N40_N-Type Semiconductor Discharge Switch, ThinPak - Manual (Page 2)

Performance Characteristics T
J
=25 o C unless otherwise specified Measurements
Parameters Symbol Test Conditions Min. Typ. Max. Units
Anode to Cathode Breakdown Voltage V
DR
V
GK
=0, I
A
=1mA 4 kV
Anode-Cathode Off-State Current I
D
V
GK
=0V, V
AK
=4000V T
J
=25 o C <50 100 uA
T
J
=125 o C 100 800 uA
Turn-On Threshold Current V
GK(TH)
V
AK
=V
GK
, I
AK
=1mA , see Note 1 5 mA
Gate-Cathode Leakage Current I
GK(lkg)
V
GK
=0V, see Note 1 20 uA
Anode-Cathode On-State Voltage V
T
I
T
=400A T
J
=25 o C 1.7 V
Ig = 500 mA T
J
=125 o C 1.9 V
Turn-on Delay Time t
D(ON)
0.75 uF Capacitor discharge 200 ns
Pk Rate of Change of Current (measured) dI/dt V
AK
= 3.95 kV T
J
=25 o C 30 kA/us
Peak Anode Current I
P
R
gk
= 10 ohms, Ls = 90 nH 10 kA
Gate di/dt =100 A/us
Notes:
1. Measurements made with a 10 Ohm shorting resistor connected between the gate and cathode.
2. Case Exterior Assummed to be 0.002" of 63sn/37pb solder applied directly to cathode bond area of thinPak.
Typical Performance Curves (unless otherwise specified)
Solidtron TM
N-Type Semiconductor Discharge Switch,
ThinPak TM
Data Sheet (Rev 0 - 05/12/08)
CCSTA14N40A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Fax: 610-407-3688
Figure 1.
Measured Low current
On-State Characteristics.
Figure 2.
Predicted high current
On-State Characteristics.
CAO 05/28/09 CAO 05/28/09