Silicon Power SMCT AA 32N14_N-MOS VCS, TO-247 - Manual (Page 2)

Performance Characteristics T
J
=25
o
C unless otherwise specified Measurements
Parameters Symbol Test Conditions Min. Typ. Max. Units
Anode to Cathode Breakdown Voltage V
(BR)
V
GK
=-5, I
A
=1mA 1400 V
Anode-Cathode Off-State Current i
D
V
GE
=-5V, V
AK
=1200V T
C
=25 o C <10 100 uA
T
C
=150 o C 250 1000 uA
Gate-Cathode Turn-On Threshold Voltage V
GK(TH)
V
AK
=V
GK
, I
AK
=1mA 0.7 V
Gate-Cathode Leakage Current I
GK(lkg)
V
GK
=+/-20V 500 nA
Anode-Cathode On-State Voltage V
T
I
T
=32A, V
GK
=+5V T
C
=25 o C 1.5 2.0 V
(See Figures 1,2 & 3) T
C
=150 o C 1.3 1.5 V
Input Capacitance C
ISS
6 nF
Turn-on Delay Time t
D(ON)
0.2uF Capacitor Discharge 50 100 nS
Rate of Change of Current dI/dt T
J
=25 o C, V
GK
= -5V to +5V 75 kA/uSec
Peak Anode Current I
P
V
AK
=800V, RG=4.7Ω 3500 A
Discharge Event Energy E
DIS
L
S
= 7nH (See Figures 4,5 & 6) 32 mJ
Turn-on Delay Time t
D(ON)
0.2uF Capacitor Discharge 50 100 nS
Rate of Change of Current dI/dt T
J
=150 o C, V
GK
= -5V to +5V 110 kA/uSec
Peak Anode Current I
P
V
AK
=1200V, RG=4.7Ω 4000 A
Discharge Event Energy E
DIS
L
S
= 7nH (See Figures 4,5 & 6) 70 mJ
Junction to Case Thermal Resistance R
θ JC
Anode (bottom) side cooled (Note 1.) 0.08
o
C/W
SMCTAA32N14A10
275 Great Valley Parkway
Malvern, PA 19355
Ph: 610-407-4700
Advanced Pulse Power Device
N-MOS VCS, TO-247
Data Sheet (Rev 0 - 12/19/07)
Typical Performance Curves (unless otherwise specified)
Figure 1. On-State Characteristics Figure 2. On-State Characteristics
Figure 3. Predicted High Current On-State Characteristics
CAO 05/28/09 CAO 05/28/09