Communication Concepts MPSH81 - Manual (Page 2)

3
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
ON CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage* I
C
= 1.0 mA, I
B
= 0 20 V
V
(BR)CBO
Collector-Base Breakdown Voltage I
C
= 10 µ A, I
E
= 0 20 V
V
(BR)EBO
Emitter-Base Breakdown Voltage I
E
= 10 µ A, I
C
= 0 3.0 V
I
CBO
Collector Cutoff Current V
CB
= 10 V, I
E
= 0 100 nA
I
EBO
Emitter Cutoff Current V
EB
= 2.0 V, I
C
= 0 100 nA
h
FE
DC Current Gain I
C
= 5.0 mA, V
CE
= 10 V 60
V
CE( sat )
Collector-Emitter Saturation Voltage I
C
= 5.0 mA, I
B
= 0.5 mA 0.5 V
V
BE( on )
Base-Emitter On Voltage I
C
= 5.0 mA, V
CE
= 10 V 0.9 V
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product I
C
= 5.0 mA, V
CE
= 10 V,
f = 100 MHz
600 MHz
C
cb
Collector-Base Capacitance V
CB
= 10 V, I
E
= 0, f = 1.0 MHz 0.85 pF
C
ce
Collector Emitter Capcitance V
CB
= 10 V, I
B
= 0, f = 1.0 MHz 0.65 pF
*
Pulse Test: Pulse Width ≤ 300 µ s, Duty Cycle ≤ 2.0%
NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Typical Characteristics
Symbol Parameter Test Conditions Min Max Units
PNP RF Transistor
(continued)
MPSH81 / MMBTH81
PNP(Is=10f Xti=3 Eg=1.11 Vaf=100 Bf=133.8 Ise=1.678p Ne=2.159 Ikf=.1658 Nk=.901 Xtb=1.5 Var=100 Br=1
Isc=9.519n Nc=3.88 Ikr=5.813 Rc=7.838 Cjc=2.81p Mjc=.1615 Vjc=.8282 Fc=.5 Cje=2.695p Mje=.3214 Vje=.7026
Tr=11.32n Tf=97.83p Itf=69.29 Xtf=599u Vtf=10)
Spice Model
DC Current Gain vs
Collector Current
0.1 1 10 100
0
20
40
60
80
100
120
140
160
180
200
I - COLLECTOR CURRENT (mA)
h
-
DC
CU
RRE
N
T
G
A
IN
C
FE
V = 1.0V
CE
- - - -
T = 125°C A
T = 25°C A
T = 55°C A
-
Collector Saturation Voltage
vs Collector Current
0.1 1 10 100
0.01
0.02
0.05
0.1
0.2
0.5
1
I - COLLECTO R CURRENT ( mA)
V
-
C
O
L
L
E
C
T
O
R
S
A
T
. V
O
L
T
A
G
E
(
V
)
C
- - - -
-
-
-
-
-
-
T = 55°C A
-
T = 25°C A T = 125°C A
I = 10 I C B
-
CE
(S
AT
)