Communication Concepts 2N4401 - Manual (Page 3)

2N4401
Low Power Bipolar Transistors
Page <3> 12/05/08 V1.1
Electrical Characteristics (T
a
= 25°C unless otherwise specified)
Characteristic Symbol 2N4401 Unit
DC Current Gain
I
C
= 0.1mA, V
CE
= 1V
I
C
= 1mA, V
CE
= 1V
I
C
= 10mA, V
CE
= 1V
I
C
= 150mA, V
CE
= 1V*
I
C
= 500mA, V
CE
= 2V*
h
FE
>20
>40
>80
100 - 300
>40
-
Dynamic Characteristics
Small Signal Current Gain
I
C
= 1mA, V
CE
= 10V, f = 1KHz
h
fe
40 - 500 -
Input Impedance
I
C
= 1mA, V
CE
= 10V, f = 1KHz
h
ie
1.0 - 15 k Ω
Voltage Feedback Ratio
I
C
= 1mA, V
CE
= 10V, f = 1KHz
h
re
0.1 - 8.0 x10 -4
Output Impedance
I
C
= 1mA, V
CE
= 10V, f = 1KHz
h
oe
1.0 - 30 µΩ
Collector-Base Capacitance
V
CB
= 5V, I
E
= 0, f = 100KHz
V
CB
= 10V, I
E
= 0, f = 140KHz
C
cb
<6.5
-
pF
Emitter-Base Capacitance
V
EB
= 0.5V, I
C
= 0, f = 100kHz
C
eb
<30
Transition Frequency
I
C
= 20mA, V
CE
= 10V, f = 100MHz
f
T
>250 MHz
Switching Characteristics
V
CC
= 30V, V
EB
= 2V
I
C
= 150mA, I
B1
= 15mA
Delay Time t
d
<15
ns
Rise Time t
r
<20
V
CC
= 30V, I
C
= 150mA
I
B1
= I
B2
= 15mA
Storage time t
s
<225
ns
Fall Time t
f
<30
*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%