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Pam8124 new prod uc t, Absolute maximum ratings, Recommended operating conditions – Diodes PAM8124 User Manual

Page 3: Electrical characteristics

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PAM8124

Document number: DS36627 Rev. 1 - 2

3 of 15

www.diodes.com

October 2013

© Diodes Incorporated

PAM8124

NEW PROD

UC

T

A Product Line of

Diodes Incorporated


Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Parameter Rating

Unit

Supply Voltage (VCC)

28 V

Logic Input Voltage (SDN, MUTE, GAIN0, GAIN1, SE_BTL)

-0.3 to V

CC

+0.3

V

Analog Input Voltage (LIN, RIN)

-0.3 to +5.5

V

Storage Temperature

-65 to +150

°C

Maximum Junction Temperature

150

°C

Junction to ambient thermal resistance

40

°C/W



Recommended Operating Conditions

(@T

A

= +25°C, unless otherwise specified.)

Symbol Parameter

Min

Max

Unit

V

CC

Supply Voltage

10

26

V

T

A

Operating Ambient Temperature Range

-40 +85 °C

T

J

Junction Temperature Range

-40 +125 °C



Electrical Characteristics

(@T

A

= +25°C, V

CC

= 24V, Gain = 20dB, R

L

= 8Ω unless otherwise specified.)

Symbol Parameter

Test

Conditions

Min

Typ

Max

Units

|VOS|

Class-D output offset voltage(measured
differently)

V

i

= 0V, A

V

= 36dB

20

100

mV

I

CC(q)

Quiescent supply current

SDN = 2.5V, MUTE = 0V, No Load

25

40

mA

I

CC(MUTE)

Quiescent supply current in mute mode

MUTE = 2.5V, No load

25

40

mA

I

CC(SDN)

Quiescent current in shutdown mode

SDN = 0.8V, No load

30

60

µA

R

DS(ON)

Drain-source on-state resistance

I

O

= 0.5A

150 mΩ

G Gain

GAIN1 = 0.8V, GAIN0 = 0.8V

18

20

22

dB

GAIN1 = 0.8V, GAIN0 = 2.5V

24

26

28

GAIN1 = 2.5V, GAIN0 = 0.8V

30

32

34

GAIN1 = 2.5V, GAIN0 = 2.5V

34

36

38

Mute Attenuation

Vi = 1Vrms

-60

dB

PSRR

Power Supply Rejection Ratio

V

RIPPLE

= 200mVpp,

f = 1kHz,gain = 20dB

-52 dB

P

O

Output Power at 1% THD+N

R

L

= 4Ω, f = 1kHz

14

W

R

L

= 8Ω, f = 1kHz

8

Output Power at 10% THD+N

R

L

= 4Ω, f = 1kHz

18

R

L

= 8Ω, f = 1kHz

10

THD+N

Total harmonic distortion + noise

R

L

=4Ω, f = 1kHz, Po = 10W

0.15

%

R

L

= 8Ω, f = 1kHz, Po = 5W

0.08

Vn

Output integrated noise floor

20Hz to 22kHz, A-weighted,
Gain = 20dB

200

µV

Cs Crosstalk

P

O

= 1W, f = 1kHz, Gain = 20dB

-70

dB

SNR Signal-to-noise

ratio

THD+N<1%,

f = 1kHz, Gain = 20dB

92

dB

OTP

Thermal trip point

160 °C

OTH Thermal

hysteresis

60 °C

fosc Oscillator

frequency

SE_BTL = 2.5V

250

300

350

kHz

SE_BTL = 0.8V

360