Diodes LMN200B01 - Manual (Page 6)

DS30651 Rev. 7 - 2 6 of 10 LMN200B01
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V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 10 Transfer Characteristics
I
, D
R
A
IN
C
U
R
R
E
N
T
(
A
)
D
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0 1 2 3 4 5
T =
A
-55 °C
T =
A
25 °C
T =
A
85 °C
T =
A
125 °C
T =
A
150 °C
V = 10V
DS
T , JUNCTION TEMPERATURE (°C)
J
Fig. 11 Gate Threshold Voltage
vs. Junction Temperature
0
1.2
1.4
1.6
1.8
2
2.2
-50 -75 -25 0 25 50 75 100 125 150
V
G
A
T
E
T
H
R
E
S
H
O
L
D
V
O
L
T
A
G
E
(
V
)
G
S
(t
h
),
V = 10V
DS
V = V
DS GS
I = 0.25mA
D
Pulsed
I , DRAIN CURRENT (A)
D
Fig. 12 Static Drain-Source On-Resistance
vs. Drain Current
0.001 0.01 0.1 1
0
1
2
3
4
5 V = 5V
GS
Pulsed
T = -55 °C
A
T = 25 °C
A
T = 125 °C
A T = 150 °C
A
T = 85 °C
A
1
I , DRAIN CURRENT (A)
D
Fig. 13 Static Drain-Source On-Resistance
vs. Drain Current
4
0
1
2
3
0.001 0.01 0.1
V = 10V
GS
Pulsed
T = 150 °C
A
T = 125 °C
A
T = 85 °C
A
T = 25 °C
A
T = -55 °C
A
0
V GATE SOURCE VOLTAGE (V)
GS,
Fig. 14 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
1
2
3
4
5
6
7
0 2 4 6 8 10 12 14 16 18 20
I = 115mA
D
I = 50mA
D
T = 25 °C
A
Pulsed
V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 9 Output Characteristics
I
, D
R
A
IN
C
U
R
R
E
N
T
(
A
)
D
T = 25 °C
A
0 1 2 3 4 5 6 7
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V = 8V
GS
V = 10V
GS
V = 3V
GS
V = 4V
GS
V = 5V
GS
V = 6V
GS
T
C
U
D
O
R
P
W
E
N
Typical N-Channel MOSFET (Q2) Characteristics