Diodes LMN200B01 - Manual (Page 3)

DS30651 Rev. 7 - 2 3 of 10 LMN200B01
www.diodes.com
Electrical Characteristics: Pre-Biased PNP Transistor (Q1) @ T
A
= 25
°
C unless otherwise specified
T
C
U
D
O
R
P
W
E
N
* Pulse Test: Pulse width, tp<300 µ S, Duty Cycle, d<=0.02.
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Cut Off Current I
CBO
 
-100 nA V
CB
= -50V, I
E
= 0
Collector-Emitter Cut Off Current I
CEO
  -500 nA V
CE
= -50V, I
B
= 0
Emitter-Base Cut Off Current I
EBO

-0.5 -1 mA V
EB
= -5V, I
C
= 0
Emitter-Base Cut Off Current V (BR)CBO -50   V I C = -10
µ
A, I E = 0
Collector-Base Breakdown Voltage V
(BR)CEO -50
 
V I
C
= -2 mA, I
B
= 0
Collector-Emitter Breakdown Voltage V
I(OFF)

-0.55 -0.3 V V
CE
= -5V, I
C
= -100
µ
A
Output Voltage V
OH -4.9   V V
CC
= -5V, V
B
= -0.05V, R
L
= 1K
Output Current (leakage current same as I
CEO
) I
O(OFF)
 
-500 nA V
CC
= -50V, V
I
= 0V
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage V CE(SAT)
 
-0.15 V I
C
= -10 mA, I
B
= -0.5 mA
  -0.2 V I
C
= -50mA, I
B
= -5mA
 
-0.2 V I
C
= -20mA, I
B
= -1mA
 
-0.25 V I
C
= -100mA, I
B
= -10mA
  -0.25 V I
C
= -200mA, I
B
= -10mA
 
-0.3 V I
C
= -200mA, I
B
= -20mA
Equivalent on-resistance* R CE(SAT)
  1.5 Ω I C = -200mA, I B = -10mA
DC Current Gain h
FE
60 150
  V
CE
= -5V, I
C
= -20 mA
60 215
  V
CE
= -5V, I
C
= -50 mA
60 245
  V
CE
= -5V, I
C
= -100 mA
60 250
  V
CE
= -5V, I
C
= -200 mA
Input On Voltage V I(ON) -2.45 -0.7  V V O = -0.3V, I C = -2 mA
Output Voltage (equivalent to V
CE(SAT)
or V
O(on)
) V
OL

-0.065 -0.15 V
V
CC
= -5V, V B
= -2.5V,
I o /I I = -50mA /-2.5mA
Input Current I
i

-9.2 -13 mA V
I
= -5V
Base-Emitter Turn-on Voltage V
BE(ON)

-1.125 -1.3 V V
CE
= -5V, I
C
= -200mA
Base-Emitter Saturation Voltage V BE(SAT)

-3.2 -3.6
V
I
C
= -50mA, I
B
= -5mA

-4.55 -5.5 I
C
= -80mA, I
B
= -8mA
Input Resistor (Base), +/- 30% R2  0.47  K Ω 
Pull-up Resistor (Base to Vcc supply), +/- 30% R1

10

K
Ω 
Resistor Ratio (Input Resistor/Pullup resistor), +/ -20% R1/R2  21   
SMALL SIGNAL CHARACTERISTICS
Transition Frequency (gain bandwidth product) f
T

200

MHz
V CE = -10V, I E = -5mA,
f = 100MHz
Collector capacitance, (Ccbo-Output Capacitance) C
C

20

pF
V CB = -10V, I E = 0A,
f = 1MHz