Diodes LMN200B01 - Manual

Lead-free Green
DS30651 Rev. 7 - 2 1 of 10 LMN200B01
www.diodes.com

Diodes Incorporated
•
LMN200B01 is best suited for applications where the load
needs to be turned on and off using control circuits like
micro-controllers, comparators, etc., particularly at a point
of load. It features a discrete pass transistor with stable
V
CE(SAT)
which does not depend on the input voltage and
can support continuous maximum current of 200 mA. It
also contains a discrete N-MOSFET that can be used as
control. This N-MOSFET also has a built-in pull down
resistor at its gate. The component can be used as a part
of a circuit or as a stand alone discrete device.
Characteristic Symbol Value Unit
Power Dissipation (Note 3) P d 300 mW
Power Derating Factor above 125
°
C P
der 2.4 mW/
°
C
Output Current I out 200 mA
Mechanical Data
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Case: SOT-26
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Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
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Moisture sensitivity: Level 1 per J-STD-020C
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Terminal Connections: See Diagram
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Terminals: Finish - Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
•
Marking & Type Code Information: See Last Page
•
Ordering Information: See Last Page
•
Weight: 0.016 grams (approximate)
T
C
U
D
O
R
P
W
E
N
LMN200B01
200 mA LOAD SWITCH FEATURING PRE-BIASED PNP TRANSISTOR AND N-MOSFET
WITH PULL DOWN RESISTOR
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
Maximum Ratings, Total Device
S
D
G
C
E
B
Q2
NMOS
R3
37K
R2
470
Q1
PNP
R1 10K
1 2 3
4 5 6
C_Q1
E_Q1 G_Q2 D_Q2
S_Q2 B_Q1
DSNM6047_DIE
DDTB142JU_DIE
Fig. 2 Schematic and Pin Configuration
@ T A = 25
°
C unless otherwise specified
Sub-Components Reference Device Type R1 (NOM) R2 (NOM) R3 (NOM) Figure
DDTB142JU_DIE Q1 PNP Transistor 10K 470  2
DSNM6047_DIE Q2 N-MOSFET
 
37K 2
General Description
Characteristic Symbol Value Unit
Junction Operation and Storage Temperature Range T
j
,T
stg -55 to +150 °C
Thermal Resistance, Junction to Ambient Air (Note3)
(Equivalent to one heated junction of PNP transistor)
R θ JA 417 °C/W
Features
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Voltage Controlled Small Signal Switch
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N-MOSFET with Gate Pull-Down Resistor
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Surface Mount Package
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Ideally Suited for Automated Assembly Processes
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Lead Free By Design/ROHS Compliant (Note 1)
•
"Green" Device (Note 2)
Thermal Characteristics
1
2
3
4
5
6
Fig. 1: SOT-26