Dmhc3025lsd – Diodes DMHC3025LSD User Manual
Page 7
DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
7 of 9
November 2013
© Diodes Incorporated
DMHC3025LSD
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0
-50 -25
0
25
50
75
100 125
150
T , JUNCTION TEMPERATURE ( C)
J
Figure 18 On-Resistance Variation with Temperature
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
D
S
(on)
V
= -10V
I =
A
GS
D
-10
V
=
5V
I =
A
GS
D
-4.
-5
0.5
1.0
1.5
2.0
2.5
3.0
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS(
T
H
)
0
-50 -25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Figure 19 Gate Threshold Variation vs. Ambient Temperature
A
-I = 1mA
D
-I = 250µA
D
0
0.3
0.6
0.9
1.2
1.5
10
15
20
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
0
5
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 20 Diode Forward Voltage vs. Current
SD
T = -55 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
C
, J
UNCT
IO
N C
A
P
A
CI
TA
NCE (
pF
)
T
1,000
10
100
0
5
10
15
20
25
30
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 21 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 22 Gate-Charge Characteristics
g
0
2
4
6
8
-V
,
G
AT
E
-S
O
U
R
C
E V
O
LTA
G
E (
V
)
GS
10
V
= -15V
I = -6A
DS
D