Diodes DMHC3025LSD - Manual (Page 5)

DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
5 of 9
www.diodes.com
November 2013
© Diodes Incorporated
DMHC3025LSD
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.01
0.02
0.03
0.04
0.05
0.06
0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)

V = 4.5V
I = 5A
GS
D
V = V
I = 10A
GS
D
10
0.5
1.5
2.5
0
1.0
2.0
3.0
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

I = 1mA
D
I = 250µA
D
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
10
15
20
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
0
5
T = 25°C
A
T = -55°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 5 10 15 20 25 30
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
1,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
100
10
C
iss
C
oss
C
rss
f = 1MHz
0 2 4 6 8 10 12
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
0
2
4
6
8
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
10
V = 15V
I = A
DS
D
7.8