Thermal characteristics, Maximum ratings, N-channel – Diodes DMHC3025LSD User Manual
Page 2: P-channel

DMHC3025LSD
Document number: DS35821 Rev. 4 - 2
2 of 9
November 2013
© Diodes Incorporated
DMHC3025LSD
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Total Power Dissipation (Note 5)
P
D
1.5 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
83
°C/W
t < 10s
50
Thermal Resistance, Junction to Case
R
θJC
14.5
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Maximum Ratings
N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25
C
T
A
= +70
C
I
D
6.0
4.8
A
t < 10s
T
A
= +25
C
T
A
= +70
C
I
D
7.8
6.1
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25
C
T
A
= +70
C
I
D
4.6
3.6
A
t < 10s
T
A
= +25
C
T
A
= +70
C
I
D
6.1
4.8
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
2.5 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
60 A
Maximum Ratings
P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= +25
C
T
A
= +70
C
I
D
-4.2
-3.3
A
t < 10s
T
A
= +25
C
T
A
= +70
C
I
D
-5.4
-4.3
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25
C
T
A
= +70
C
I
D
-3.2
-2.5
A
t < 10s
T
A
= +25
C
T
A
= +70
C
I
D
-4.3
-3.3
A
Maximum Continuous Body Diode Forward Current (Note 5)
I
S
-2.5
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
I
DM
-30 A
Note:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.