Dmg6601lvt advance informtion, Dmg6601lvt – Diodes DMG6601LVT User Manual
Page 7
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
7 of 9
August 2013
© Diodes Incorporated
DMG6601LVT
ADVANCE INFORMTION
0.04
0.08
0.12
0.16
0
-50 -25
0
25
50
75
100 125
150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 19 On-Resistance Variation with Temperature
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
D
S
(on)
V
=
5V
I =
A
GS
D
-4.
-5
V
= -10V
I =
A
GS
D
-10
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.0
0
-50 -25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 20 Gate Threshold Variation vs. Ambient Temperature
A
-V
, G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E (
V
)
GS
(T
H
)
-I = 1mA
D
-I = 250µA
D
0
2
4
6
8
10
0
0.3
0.6
0.9
1.2
1.5
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 21 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25 C
A
T = -55 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
0
5
10
15
20
25
30
1,000
100
10
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 22 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
2
4
6
8
10
12
14
Q , TOTAL GATE CHARGE (nC)
Fig. 23 Gate-Charge Characteristics
g
0
2
4
6
8
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
V
= -15V
I = -2.3A
DS
D