Dmg6601lvt advance informtion, Dmg6601lvt – Diodes DMG6601LVT User Manual
Page 4
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
4 of 9
August 2013
© Diodes Incorporated
DMG6601LVT
ADVANCE INFORMTION
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0
0
5
10
15
20
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AI
N
-S
O
U
R
CE
O
N-
R
ESI
S
TANCE (
)
DS
(O
N)
V
= 2.5V
GS
V
= 10V
GS
V
= 4.5V
GS
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
2
3
4
5
6
7
8
9
10
0
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
TAN
C
E (
)
DS
(O
N)
I = 2A
D
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0
2
4
6
8
10 12
14 16
18 20
0.10
0
I , DRAIN CURRENT (A)
D
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
R
, DRAI
N
-S
O
URCE
O
N-
RESI
ST
ANCE (
)
DS
(O
N)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= 4.5V
GS
0.6
0.8
1.2
1.4
1.6
1.8
1.0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 6 On-Resistance Variation with Temperature
J
R
, D
R
AI
N
-S
O
U
R
C
E
ON-
R
E
S
IS
TA
NCE
(
N
ORM
A
LI
Z
E
D)
DS
(O
N
)
V
= 4.5V
I = 5A
GS
D
V
=
V
I = 10A
GS
D
10
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.10
0
-50 -25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 7 On-Resistance Variation with Temperature
J
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)
V
=
V
I = 5A
GS
D
4.5
V
=
V
I = 10A
GS
D
10
0.2
0.4
0.6
0.8
1.2
1.4
1.6
1.0
0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
AT
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
I = 1mA
D
I = 250µA
D