Dmg6601lvt advance informtion, P channel - q2, Dmg6601lvt – Diodes DMG6601LVT User Manual
Page 6
DMG6601LVT
Document number: DS35405 Rev. 4 - 2
6 of 9
August 2013
© Diodes Incorporated
DMG6601LVT
ADVANCE INFORMTION
P Channel - Q2
0
2
4
6
8
0
0.5
1.0
1.5
2.0
10
-V , DRAIN -SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V
= -3.0V
GS
V
= -3.5V
GS
V
= -4.0V
GS
V
= -4.5V
GS
V
= -10V
GS
V
= -5.0V
GS
V
= -2.5V
GS
V
= -2.0V
GS
0
2
4
6
8
0
1
2
3
4
10
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 14 Typical Transfer Characteristics
-I
, D
R
AI
N
C
U
R
R
E
N
T (
A
)
D
T = 150 C
A
T = 125 C
A
T = 85 C
A
T = 25 C
A
T = -55 C
A
V
= -5.0V
DS
0.02
0.04
0.06
0.08
0.12
0.14
0.16
0.18
0
2
4
6
8
10
0.10
0.20
0
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)
-I , DRAIN SOURCE CURRENT (A)
Fig. 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
V
= -4.5V
GS
V
= -10V
GS
V
= -2.5V
GS
0.04
0.08
0.12
0.16
2
3
4
5
6
7
8
9
10
0
-V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 16 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
TA
N
C
E (
)
DS
(O
N)
I = -2A
D
0.04
0.08
0.12
0.16
0
2
4
6
8
10
0.20
0
-I , DRAIN SOURCE CURRENT (A)
Fig. 17 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, DRAIN-
S
O
URCE
O
N-
RE
SI
ST
ANC
E
(
)
DS
(O
N)
T = -55 C
A
T = 25 C
A
T = 85 C
A
T = 125 C
A
T = 150 C
A
V
= -4.5V
GS
0.6
0.8
1.2
1.4
1.8
1.0
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
ST
A
NCE
(
N
O
R
M
A
L
IZE
D
)
DS
(O
N)
1.6
-50
-25
0
25
50
75
100 125 150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 18 On-Resistance Variation with Temperature
V
= -4.5V
I = -5A
GS
D
V
= -10V
I = -10A
GS
D