Dmp2018lfk – Diodes DMP2018LFK User Manual
Page 5
DMP2018LFK
Document number: DS35357 Rev. 5 - 2
5 of 7
March 2012
© Diodes Incorporated
DMP2018LFK
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0
5
10
15
20
100
1,000
10,000
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
Fig. 9 Typical Total Capacitance
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
f = 1MHz
C
iss
C
rss
C
oss
0
4
8
12
16
20
1
10
100
1,000
-I
, L
EAKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
100,000
10,000
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
20
40
60
80
100
120
Fig. 11 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
0
2
4
6
8
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
V
= -16V
I = -7.2A
DS
D
0.1
1
10
100
Fig. 12 Safe Operation Area
V
, DRAIN-SOURCE VOLTAGE (V)
DS
0.01
0.1
1
10
100
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
T
= 150°C
T = 25°C
Single Pulse
J(max)
A
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
0.001
0.01
0.1
1
10
100
1,000
Fig. 13 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001
0.0001
0.001
0.01
0.1
1
r(t
),
T
R
ANS
IEN
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R
(t)
Duty Cycle, D = t /t
J
A
JA
1 2
θ
R
(t) = r(t) *
θJA
R
R
= 61°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5