Diodes DMP2018LFK - Manual (Page 4)

DMP2018LFK
Document number: DS35357 Rev. 5 - 2
4 of 7
www.diodes.com
March 2012
© Diodes Incorporated
DMP2018LFK
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0
0.01
0.02
0.03
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
(O
N
)
Ω
V = -10V
GS
V = -4.5V
GS
V = -2.5V
GS
0
0.01
0.02
0.03
0 5 10 15 20 25 30
-I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N
)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRA
IN-
S
OURCE
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
L
IZED)
DS
O
N
V = -5V
I = -5A
GS
D
V = -10V
I = -10A
GS
D
0
0.002
0.004
0.006
0.008
0.010
0.012
0.014
0.016
0.018
0.020
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = -10V
I = -10A
GS
D
V = -5V
I = -5A
GS
D
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
DS
O
N
Ω
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V
, G
A
TE
TH
R
E
SH
O
L
D
VO
L
T
A
G
E
(
V
)
GS
(T
H
)
I = -250µA
D
I = -1mA
D
5
10
15
20
25
30
0
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25°C
A