Diodes AP8800A - Manual (Page 3)

AP8800A
Document number: DS35100 Rev. 3 - 2
3 of 13
www.diodes.com
August 2012
© Diodes Incorporated
AP8800A
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V
IN
Operating Input Voltage Relative to GND 8.0 28 V
V
CTRLDC
Voltage Range for 24% to 200% DC Dimming Relative to GND 0.3 2.5 V
V
CTRLL
Voltage Low for PWM Dimming Relative to GND 0.2 V
I
SW
Continuous Average Switch Current (Note 4) 370 mA
D
PWM
Duty Cycle Range Applied to CTRL (f < 500Hz) 0.01 1
f
SW
Switching Frequency 600 kHz
T
A
Ambient Temperature Range -40 105 °C
Note: 4. Dependent on junction and ambient temperature.
Electrical Characteristics
(@T
A
= +25°C, V
IN
= 12V, unless otherwise specified.)
Symbol Parameter Conditions Min Typ Max Unit
I
Q
Quiescent Current V
CTRL
= 1.25V, f
SW
= 250kHz 300 650 µA
I
SD
Shutdown Current V
CTRL
= 0V 20 30 µA
V
THD
Internal Threshold Voltage 95 100 105 mV
V
REF
Internal Reference Voltage 1.25 V
I
SET
SET Pin Input Current V
SET
= V
IN
-0.1 1.3 µA
R
DS(ON)
On Resistance of MOSFET 1.5 2.2 Ω
I
SW-LKG
Switch Leakage Current 5 µA
f
SW
Switching Frequency with L = 100µH
ADJ pin floating L = 100H
I
OUT
= 350mA @ 1 LED (V
LED
= 3.4V)
250 kHz
t
SS
Soft-Start Time
Time taken for output current to reach 90%
of final value after V
CTRL
= 0.3V
500 µs
t
PD
Internal Comparator Propagation Delay 55 ns
θ
JA
Thermal Resistance Junction-to-Ambient TSOT25 (Note 5) 200 °C/W
Note: 5. Test condition for TSOT25: Device mounted on FR-4 PCB (25mm x 25mm 1oz copper, minimum recommended pad layout on
top layer and thermal vias to bottom layer ground plane. For better thermal performance, larger copper pad for heat-sink is needed.