Diodes AP2552/ AP2553/ AP2552A/ AP2553A - Manual (Page 6)

AP2552/AP2553/AP2552A/AP2553A
Document number: DS35404 Rev. 8 - 2
6 of 16
www.diodes.com
February 2014
© Diodes Incorporated
AP2552/ AP2553/ AP2552A/ AP2553A
Electrical Characteristics
(cont.)
(@T
A
= +25°C, V
IN
= 2.7V to 5.5V, V
EN
= 0V or V
EN
= V
IN
, R
FAULT
= 10kΩ, unless otherwise specified.)
Symbol Parameter Test Conditions (Note 6) Min Typ Max Unit
Reverse Voltage Protection
V
RVP
Reverse-Voltage Comparator Trip Point V
OUT
– V
IN
95 135 190 mV
IROCP Reverse Current Limit V
OUT
– V
IN
= 200mV  0.72  A
t
TRIG
Time from Reverse-Voltage Condition to
MOSFET Turn Off
(AP2552A/AP2553A)
V
IN
= 5V 3 4.75 7 ms
Fault Flag
V
OL
FAULT Output Low Voltage I
FAULT
= 1mA   180 mV
I
FOH
FAULT Off Current V
FAULT
= 6V   1 µA
t
Blank_OC
FAULT Blanking and Latch Off Time
(Over-Current)
Assertion or deassertion due to overcurrent 5 7.5 10 ms
t
Blank_RV
FAULT Blanking Time
(Reverse-Voltage) Assertion or deassertion due to
reverse-voltage
2 3.75 6 ms
Thermal Shutdown
T
SHDN
Thermal Shutdown Threshold Enabled, R
LOAD
= 1kΩ  160  °C
T
SHDN_OCP
Thermal Shutdown Threshold under
Current Limit
Enabled, R
LOAD
= 1kΩ  140  °C
T
HYS
Thermal Shutdown Hysteresis   20  °C
Note: 7. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately.
Typical Performance Characteristics
V
EN
90%
V
OUT
T
D(ON)
10%
T
D(OFF)
50% 50%
T
R
10%
90%
T
F
V
EN
90%
V
OUT
T
D(ON)
10%
T
D(OFF)
50% 50%
T
R
10%
90%
T
F
Figure 1 Voltage Waveforms: AP2552/52A (left), AP2553/53A (right)
Figure 2 Response Time to Short Circuit Waveform