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Electrical characteristics – Diodes AP2196 User Manual

Page 4

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AP2186/ AP2196

Document number: DS31815 Rev. 3 - 2

4 of 17

www.diodes.com

March 2013

© Diodes Incorporated

AP2186/ AP2196



Electrical Characteristics

(@T

A

= +25°C, C

IN

= 10µF, V

IN

= +5V, unless otherwise specified.)

Symbol Parameter

Test

Conditions

Min

Typ

Max

Unit

V

UVLO

Input UVLO

R

LOAD

= 1k

1.6 1.9 2.5 V

I

SHDN

Input Shutdown Current

Disabled, I

OUT

= 0

0.5 1 µA

I

Q

Input Quiescent Current, Dual

Enabled, I

OUT

= 0

95

140

µA

I

LEAK

Input Leakage Current

Disabled, OUT grounded

1

µA

I

REV

Reverse Leakage Current

Disabled, V

IN

= 0V, V

OUT

= 5V, I

REV

at V

IN

1

µA

R

DS(ON)

Switch On-Resistance

V

IN

= 5V, I

OUT

= 1.5A, -40°C

≤ T

A

≤ +85°C

MSOP-8EP

90

135

m

SO-8

100

135

m

V

IN

= 3.3V, I

OUT

= 1.5A, -40°C

≤ T

A

≤ +85°C

MSOP-8EP

120

160

m

SO-8

I

SHORT

Short-Circuit Current Limit

Enabled into short circuit, C

L

= 68µF

2.1 A

I

LIMIT

Over-Load Current Limit

V

IN

= 5V, V

OUT

= 4.5V, C

L

= 120µF, -40°C

≤ T

A

≤ +85°C

1.6 2.1 2.6 A

I

Trig

Current Limiting Trigger Threshold

V

IN

= V

EN

, Output Current Slew rate (<100A/WS), C

L

= 68µF

2.5 A

T

SHORT

Short-Circuit Response Time

V

OUT

= 0V to I

OUT

= I

LIMIT

(short applied to output), C

L

= 68µF

20 µs

V

IL

EN Input Logic Low Voltage

V

IN

= 2.7V to 5.5V

0.8

V

V

IH

EN Input Logic High Voltage

V

IN

= 2.7V to 5.5V

2 V

I

SINK

EN Input Leakage

V

EN

= 5V

1

µA

T

D(ON)

Output Turn-On Delay Time

C

L

=1µF, R

LOAD

= 10

0.05 ms

T

R

Output Turn-On Rise Time

C

L

=1µF, R

LOAD

= 10

0.6

1.5

ms

T

D(OFF)

Output Turn-Off Delay Time

C

L

=1µF, R

LOAD

= 10

0.01 ms

T

F

Output Turn-Off Fall Time

C

L

=1µF, R

LOAD

= 10

0.05

0.1

ms

R

FLG

FLG Output FET On-Resistance

I

FLG

=10mA

20

40

I

FOH

Error Flag Off Current

V

FLG

= 5V

0.01 1 µA

T

Blank

FLG Blanking Time

C

L

= 68µF

4 7 15

ms

T

SHDN

Thermal Shutdown Threshold

Enabled, R

LOAD

= 1k

140

C

T

HYS

Thermal

Shutdown

Hysteresis

25

C

θ

JA

Thermal Resistance Junction-to-Ambient

SO-8

(Note

5)

110

o

C/W

MSOP-8EP (Note 6)

60

o

C/W

Notes:

5. Test condition for SO-8: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad layout.

6. Test condition for MSOP-8EP: Device mounted on FR-4 2-layer board, 2oz copper, with minimum recommended pad on top layer and 3 vias to bottom

layer ground plane.



























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