Data sheet, Typical performance characteristics, Bcd semiconductor manufacturing limited 7 – Diodes AF15N50 User Manual
Page 7: Figure 8. gate charge characteristics figure 9. r, Vs. continuous drain current, Figure 10. soa, safe operation area, Figure 11. normalized on-resistance vs. t
Data Sheet
50V N-Channel MOSFET AF15N50
Aug. 2013 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
7
Typical Performance Characteristics
T
C
=25°C, unless otherwise noted.
Figure 8. Gate Charge Characteristics Figure 9. R
DS(ON)
vs. Continuous Drain Current
Figure 10. SOA, Safe Operation Area
Figure 11. Normalized On-resistance vs. T
J
0
5
10
15
20
25
30
35
0
2
4
6
8
10
V
GS
,
G
a
te
t
o
Source V
o
ltage (V
)
Q
g
, Gate Charge (nC)
V
DS
=25V
I
D
=15A
0
2
4
6
8
10
12
14
16
18
20
10
11
12
13
14
15
16
17
18
R
DS
(O
N)
, Drain
to Source On-r
e
s
is
tance
(m
)
I
D
, Continuous Drain Current (A)
V
GS
=10V
V
GS
=4.5V
-50
0
50
100
150
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Norm
alni
z
ed Dr
ai
n
to
Sour
ce O
n-r
esist
a
nc
e (m
)
T
J
, Junction Temperature (
o
C)
V
GS
=4V
V
GS
=10V
I
D
=15A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
R
DS(ON)
DC
PW=10s
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100
s
I
D
, Drai
n C
u
rr
e
n
t
(A
)
V
DS
, Drain to Source Voltage (V)
T
J(MAX)
=150
o
C
T
A
=25
o
C
Single Pulse
DUT on 1*MRP Board
V
GS
=10V