Data sheet, Recommended operating conditions, Electrical characteristics – Diodes AF15N50 User Manual
Page 4: Parameter symbol condition value unit, Static characteristics
Data Sheet
50V N-Channel MOSFET AF15N50
Aug. 2013 Rev. 1. 0
BCD Semiconductor Manufacturing Limited
4
Recommended Operating Conditions
Parameter
Symbol
Condition Value
Unit
Thermal Resistance (Note 2)
JA
Junction to
Ambient
50
C/W
Thermal Resistance
JC
Junction to Case
4
C/W
Note 2: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square pad.
Electrical Characteristics
T
C
=25°C, unless otherwise specified.
Static Characteristics
Parameters Symbol
Conditions Min
Typ
Max
Unit
Drain to Source
Breakdown Voltage
V
DSS(BR)
V
GS
=0V, I
D
=0.25mA 50
V
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=0.25mA
0.5 0.9 2 V
Zero Gate Voltage
Drain Current
I
DSS
V
DS
=50V, V
GS
=0V 1
A
Gate to Source
Leakage Current
I
GSS
V
GS
=10V, V
DS
=0V ±10
A
Drain to Source
On-state Resistance
R
DS(ON)
V
GS
=10V, I
D
=15A 10
14.32
20
m
V
GS
=4.5V, I
D
=15A 12
16.36
30